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CEM6355 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 CEM6355
기능 P-Channel Enhancement Mode Field Effect Transistor
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CEM6355 데이터시트, 핀배열, 회로
CEM6355
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -6A, RDS(ON) = 45m@VGS = -10V.
RDS(ON) = 65m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -6
IDM -24
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2006.Nov
http://www.cetsemi.com




CEM6355 pdf, 반도체, 판매, 대치품
10 VDS=-30V
ID=-6A
8
6
4
2
0
0 7 14 21 28 35
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
CEM6355
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
1s
DC
5
10-1
TA=25 C
TJ=150 C
10-2
Single
10-2
Pulse
10-1
100
101
102
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
100
D=0.5
10-1
10-2
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
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