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부품번호 CEH2288
기능 N-Channel Enhancement Mode Field Effect Transistor
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CEH2288 데이터시트, 핀배열, 회로
CEH2288
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) = 23m@VGS = 4.5V.
RDS(ON) = 30m@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G1(6)
D1(2)
G2(4)
S1(1)
D2(5)
S2(3)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 5.2
IDM 20
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2013.April
http://www.cetsemi.com




CEH2288 pdf, 반도체, 판매, 대치품
5 VDS=10V
ID=5.2A
4
3
2
1
0
0 3 6 9 12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
Figure 9. Switching Test Circuit
CEH2288
102
RDS(ON)Limit
101
100
1ms
10ms
100ms
DC
10-1
TA=25 C
TJ=150 C
Single Pulse
10-2 10-2 10-1 100 101 102
VDS, Drain-Source Voltage (V)
td(on)
VOUT
Figure 8. Maximum Safe
Operating Area
ton toff
tr td(off)
tf
90%
90%
10% INVERTED
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 10. Switching Waveforms
2
100
D=0.5
10-1
0.2
0.1
0.05
10-2
10-4
0.02
Single Pulse
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
4

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