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STP19NF20 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STP19NF20
기능 N-CHANNEL POWER MOSFET
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STP19NF20 데이터시트, 핀배열, 회로
STB19NF20, STD19NF20,
STF19NF20, STP19NF20
N-channel 200 V, 0.11 typ., 15 A MESH OVERLAY™
Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages
Datasheet — production data
TAB
3
1
D²PAK
7$%


DPAK
TAB
Features
Type
STB19NF20
STD19NF20
STF19NF20
STP19NF20
VDS
RDS(on)
max.
200 V
200 V
200 V
200 V
0.16
0.16
0.16
0.16
ID
15 A
15 A
15 A
15 A
PTOT
90 W
90 W
25 W
90 W
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
' 7$%
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Applications
Switching application
* 
6 
Description
This Power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. The result is a product that
matches or improves on the performance of
comparable standard parts from other
manufacturers.
$0Y
Order code
STB19NF20
STD19NF20
STF19NF20
STP19NF20
Table 1. Device summary
Marking
Package
19NF20
D2PAK
19NF20
DPAK
19NF20
TO-220FP
19NF20
TO-220
Packing
Tape and reel
Tube
April 2015
This is information on a product in full production.
Doc ID 12758 Rev 6
1/27
www.st.com




STP19NF20 pdf, 반도체, 판매, 대치품
Electrical characteristics
STB19NF20, STD19NF20, STF19NF20, STP19NF20
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 5. Static
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-
resistance
ID = 1 mA, VGS = 0 V
VGS = 0 V, VDS = 200 V
VGS = 0 V, VDS = 200 V,
TC = 125 °C
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 7.5 A
Min. Typ. Max. Unit
200 V
1
µA
10
±100 nA
2 3 4V
0.11 0.16
Table 6. Dynamic
Symbol
Parameter
Test conditions
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 8 V, ID = 7.5 A
VDS = 25 V, f = 1 MHz,
VGS = 0 V
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 160 V, ID = 15 A,
VGS = 10 V
(see Figure 17)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
12 S
800
165 pF
26
24
4.4 nC
11.6
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 100 V, ID = 7.5 A,
RG = 4.7 , VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
11.5
22
ns
19
11
4/27 Doc ID 12758 Rev 6

4페이지










STP19NF20 전자부품, 판매, 대치품
STB19NF20, STD19NF20, STF19NF20, STP19NF20
Electrical characteristics
Figure 8. Static drain-source on-resistance
Figure 9. Normalized V(BR)DSS vs temperature
V(BR)DSS
(norm.)
Figure 10. Gate charge vs gate-source voltage
Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
Doc ID 12758 Rev 6
7/27
27

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STP19NF20

N-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics

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