PDF IRF840B Data sheet ( Hoja de datos )

Número de pieza	IRF840B
Descripción	D Series Power MOSFET
Fabricantes	Vishay
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No Preview Available ! www.vishay.com IRF840B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 30 4 7 Single 0.85 TO-220AB S D G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. APPLICATIONS • Consumer Electronics - Displays (LCD or Plasma TV) • Server and Telecom Power Supplies - SMPS • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers TO-220AB IRF840BPbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VDS VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dtd TJ = 125 °C Soldering Recommendations (Peak Temperature)c for 10 s ID IDM EAS PD TJ, Tstg dV/dt Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 5 A. c. 1.6 mm from case. d. ISD  ID, starting TJ = 25 °C. LIMIT 500 ± 30 30 8.7 5.5 18 1.25 29 156 - 55 to + 150 24 0.37 300 UNIT V A W/°C mJ W °C V/ns °C S12-1375-Rev. A, 18-Jun-12 1 Document Number: 91521 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page www.vishay.com VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 12 - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 13 - Switching Time Waveforms VDS Vary tp to obtain required IAS RG 10 V tp L D.U.T IAS 0.01 Ω + - VDD Fig. 14 - Unclamped Inductive Test Circuit VDS VDS tp VDD IAS Fig. 15 - Unclamped Inductive Waveforms IRF840B Vishay Siliconix 10 V QGS VG QG QGD Charge Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 12 V 50 kΩ 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S12-1375-Rev. A, 18-Jun-12 5 Document Number: 91521 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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