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부품번호 | IRF730 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | Vishay | ||
로고 | |||
전체 9 페이지수
Power MOSFET
IRF730, SiHF730
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
38
5.7
22
Single
1.0
D
TO-220AB
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF730PbF
SiHF730-E3
IRF730
SiHF730
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12).
c. ISD ≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
400
± 20
5.5
3.5
22
0.59
290
5.5
7.4
74
4.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91047
S11-0508-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF730, SiHF730
Vishay Siliconix
1500
1200
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
900 Ciss
600
Coss
300
0
100
91047_05
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
150 °C
25 °C
100
0.6
91047_07
VGS = 0 V
0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 3.5 A
16
VDD = 320 V
VDD = 200 V
12
VDD = 80 V
8
4
0
0
91047_06
For test circuit
see figure 13
10
20 30
40
50
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
5 Operation in this area limited
by RDS(on)
2 10 µs
10
5 100 µs
2
1
5
2
0.1
0.1 2
91047_08
1 ms
52
1
TC = 25 °C
TJ = 150 °C
Single Pulse
52
10
5 102 2
10 ms
5 103 2
VDS, Drain-to-Source Voltage (V)
5 104
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91047
S11-0508-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 IRF730, SiHF730
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-+
Rg
• dV/dt controlled by Rg
+
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
- VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
VDD
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91047.
Document Number: 91047
S11-0508-Rev. C, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
7페이지 | |||
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |