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IRF730A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 IRF730A
기능 Power MOSFET
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IRF730A 데이터시트, 핀배열, 회로
Power MOSFET
IRF730A, SiHF730A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
400
VGS = 10 V
22
Qgs (nC)
5.8
Qgd (nC)
9.3
Configuration
Single
1.0
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both US Line Input
Only)
TO-220AB
IRF730APbF
SiHF730A-E3
IRF730A
SiHF730A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 19 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12).
c. ISD 5.5 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
400
± 30
5.5
3.5
22
0.6
290
5.5
7.4
74
4.6
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91045
S11-0508-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




IRF730A pdf, 반도체, 판매, 대치품
IRF730A, SiHF730A
Vishay Siliconix
105
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
104
Crss = Cgd
Coss = Cds + Cgd
103 Ciss
102
10
1
1
91045_05
Coss
Crss
10 102
VDS, Drain-to-Source Voltage (V)
103
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
102
10 TJ = 150 °C
1 TJ = 25 °C
0.1
0.4
91045_07
VGS = 0 V
0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 5.5 A
16 VDS = 320 V
VDS = 200 V
12 VDS = 80 V
8
4
0
0
91045_06
For test circuit
see figure 13
5 10 15 20 25
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
Operation in this area limited
by RDS(on)
10 µs
10
100 µs
1
0.1
10
91045_08
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
102 103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91045
S11-0508-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지










IRF730A 전자부품, 판매, 대치품
IRF730A, SiHF730A
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-+
Rg
dV/dt controlled by Rg
+
Driver same type as D.U.T.
ISD controlled by duty factor “D”
- VDD
D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
VDD
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91045.
Document Number: 91045
S11-0508-Rev. B, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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