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부품번호 | HY4903P 기능 |
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기능 | N-Channel Enhancement Mode MOSFET | ||
제조업체 | HOOYI | ||
로고 | |||
HY4903P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/290A
RDS(ON)= 1.6mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed
• Super Low Gate Charge
• Excellent CdV/dt effect decline
• Advanced high cell density Trench technology
• Halogen - Free Device Available
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-263-2L
Applications
• High Frequency Synchronous Buck
Converters for Computer Processor Power
• High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Ordering and Marking Information
D
G N-Channel MOSFET
S
PB
HY4903 HY4903
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
150312
HY4903P/B
Typical Operating Characteristics
Power Dissipation
Drain Current
250
200
150
100
50
T =25oC
C
0
0 20 40 60 80 100 120 140 160 180 200
Tc - Case Temperature (°C)
350
300 limited by package
250
200
150
100
50
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160 180 200
Tc- Case Temperature (°C)
1000
100
Safe Operation Area
Rds(on) Limit
100us
1ms
10ms
10
DC
1
0.1
1 10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
1
Duty = 0.5
0.1 0.2
0.1
0.01
0.05
0.02
0.001
0.01
Single
0.0001
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
4
400
Mounted on minimum pad
R :62.5oC/W
θJA
1
10
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4페이지 HY4903P/B
Avalanche Test Circuit and Waveforms
DUT
VDS L
RG
tp
VDD
IL
0.01Ω
tp
IAS
VDSX(SUS)
tAV
VDS
EAS
VDD
Switching Time Test Circuit and Waveforms
DUT
VGS
RG
tp
VDS
RD
VDD
VDS
90%
10%
VGS
td(on) tr
td(off) tf
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7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ HY4903P.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HY4903B | N-Channel Enhancement Mode MOSFET | HOOYI |
HY4903P | N-Channel Enhancement Mode MOSFET | HOOYI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |