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PDF FSTU16211MTD Data sheet ( Hoja de datos )
| Número de pieza | FSTU16211MTD | |
| Descripción | 24-Bit Bus Switch with .2V Undershoot Protection (Preliminary) | |
| Fabricantes | Fairchild Semiconductor | |
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TM
Data Sheet
FSTJ9055D, FSTJ9055R
June 2000 File Number 4756.1
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Immunity to Single Event Effects (SEE) is combined with
100K RADs of total dose hardness to provide devices which
are ideally suited to harsh space environments. The dose
rate and neutron tolerance necessary for military
applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17750T.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K
Commercial
FSTJ9055D1
10K TXV FSTJ9055D3
100K
Commercial
FSTJ9055R1
100K
TXV FSTJ9055R3
100K
Space
FSTJ9055R4
Features
• 62A, -60V, rDS(ON) = 0.023Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13
Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Symbol
D
Packaging
G
S
TO-254AA
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
1 page  
FSTJ9055D, FSTJ9055R
Typical Performance Curves Unless Otherwise Specified (Continued)
500
100
STARTING TJ = 150oC
STARTING TJ = 25oC
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
10
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
tP
50Ω
VGS ≤ 20V
50Ω
DUT
+
VDD
-
50V-150V
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
0V
VGS = -12V
VDD
RGS
RL
VDS
DUT
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
10%
VGS
10%
50%
PULSE WIDTH
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FSTU16211MTD.PDF ] | |
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