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D65NF06 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 D65NF06
기능 STD65NF06
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D65NF06 데이터시트, 핀배열, 회로
STD65NF06
STP65NF06
N-channel 60V - 11.5m- 60A - DPAK/TO-220
STripFET™ II Power MOSFET
General features
Type
STD65NF06
STP65NF06
VDSS
60V
60V
RDS(on)
<14m
<14m
Standard level gate drive
100% avalanche tested
ID
60A
60A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”™
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
3
1
DPAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STD65NF06
STP65NF06
Marking
D65NF06
P65NF06
Package
DPAK
TO-220
Packaging
Tape & reel
Tube
July 2006
Rev 1
1/14
www.st.com
14




D65NF06 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STD65NF06 - STP65NF06
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
60
VDS = Max rating
VDS = Max rating,@125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
2
VGS = 10V, ID = 30A
V
1 µA
10 µA
±100 nA
4V
11.5 14 m
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS= 25V, ID = 30A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 30A
RG = 4.7VGS = 10V
(see Figure 12)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 30V, ID = 60A,
VGS = 10V, RG = 4.7
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
50 S
1700
400
135
15
60
40
16
54
10
20
75
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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D65NF06 전자부품, 판매, 대치품
STD65NF06 - STP65NF06
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
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D65NF06

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