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부품번호 | ZXMN2F34MA 기능 |
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기능 | 20V N-channel enhancement mode MOSFET | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 8 페이지수
DISCONTINUED
ZXMN2F34MA
20V N-channel enhancement mode MOSFET in
DFN322
Summary
V(BR)DSS
20
RDS(on) (Ω)
0.060 @ VGS= 4.5V
0.120 @ VGS= 2.5V
ID (A)
8.5
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN
package provides superior thermal performance versus alternative
leaded devices
Features
• Low on-resistance
• Superior thermal performance (versus to SOT23)
• 2.5V gate drive capability
• DFN 2x2 package
Applications
• Buck/Boost DC-DC Converters
• Motor Control
• LED Lighting
Ordering information
DEVICE
ZXMN2F34MATA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3,000
Device marking
1M4
D
G
S
GS
D
Issue 3 - May 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
DISCONTINUED
ZXMN2F34MA
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Static
Drain-Source breakdown
voltage
Zero gate voltage drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance (*)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Forward
transconductance(*)(†)
gfs
Dynamic (†)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Ciss
Coss
Crss
Switching (‡)(†)
Turn-on-delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Total gate charge
Qg
Gate-Source charge
Qgs
Gate Drain charge
Qgd
Source-drain diode
Diode forward voltage(*) VSD
Reverse recovery time(†) trr
Reverse recovery charge(†) Qrr
Min.
20
0.5
Typ.
0.8
7.5
277
65
35
2.65
4.2
9.9
5.1
2.8
0.61
0.63
0.73
6.5
1.4
Max. Unit Conditions
1
100
1.5
0.060
0.120
V ID= 250μA, VGS=0V
μA VDS= 20V, VGS=0V
nA VGS=±12V, VDS=0V
V ID= 250μA, VDS=VGS
Ω VGS= 4.5V, ID= 2.5A
Ω VGS= 2.5V, ID= 1.0A
S VDS= 10V, ID= 2.5A
pF
pF VDS= 10V, VGS=0V
f=1MHz
pF
ns
ns VDD= 10V, VGS= 4.5V
ID= 1A
ns RG ≈ 6.0Ω
ns
nC VDS= 10V, VGS= 4.5V
nC ID= 2.5A
nC
1.2 V IS= 1.25A, VGS=0V
ns Tj=25oC, IF=1.65A
nC di/dt=100A/s
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing.
(‡) Switching characteristics are independent of operating junction temperature.
Issue 3 - May 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
4페이지 DISCONTINUED
ZXMN2F34MA
Package outline - DFN322
D
ee
b (3X)
Top View
D2
Bottom View
Side View
DIM Millimeters
Inches
DIM Millimeters
Inches
Min. Max. Min. Max.
Min. Max. Min. Max.
A
0.80 1.00 0.0315 0.0393 D2
1.22 1.42 0.0480 0.0559
A1
0.05
0.002
e
0.65 BSC.
0.02559 BSC
A3 0.153 0.253 0.0060 0.0099 E
1.900 2.100 0.0748 0.0826
b
0.180 0.300 0.0071 0.0118 E2
0.780 0.990 0.0307 0.0389
D
1.900 2.100 0.0748 0.0826 E4
0.480 0.680 0.0189 0.0267
L 0.300 0.500 0.0118 0.0196
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 3 - May 2008
© Zetex Semiconductors plc 2008
7
www.zetex.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
ZXMN2F34MA | 20V N-channel enhancement mode MOSFET | Zetex Semiconductors |
ZXMN2F34MATA | 20V N-channel enhancement mode MOSFET | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |