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부품번호 | ZXMN3F30FH 기능 |
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기능 | 30V SOT23 N-channel enhancement mode MOSFET | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 8 페이지수
ZXMN3F30FH
30V SOT23 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
30
RDS(on) (Ω)
0.047 @ VGS= 10V
0.065 @ VGS= 4.5V
ID (A)
4.6
4.0
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
• Low on-resistance
• 4.5V gate drive capability
• SOT23
Applications
• DC-DC Converters
• Power management functions
• Motor Control
D
G
S
Ordering information
DEVICE
ZXMN3F30FHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
D
S
Device marking
KNA
G
Top view
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3F30FH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Static
Drain-Source breakdown
Voltage
Zero gate voltage drain
current
Gate-body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance (*)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Forward
transconductance(*)(†)
gfs
Dynamic (†)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Ciss
Coss
Crss
Switching(†) (‡)
Turn-on-delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Total gatecharge
Qg
Gate-Source charge
Qgs
Gate-Drain charge
Qgd
Source-drain diode
Diode forward voltage(*) VSD
Reverse recovery time(†) trr
Reverse recovery charge(†) Qrr
Min.
30
1.0
Typ.
5.2
318
75
45
1.6
2.6
17
9.3
7.7
1
1.8
0.73
12
4.8
Max. Unit Conditions
0.5
100
3.0
0.047
0.065
V ID= 250μA, VGS=0V
μA VDS= 30V, VGS=0V
nA VGS=±20V, VDS=0V
V ID= 250μA, VDS=VGS
Ω VGS= 10V, ID= 3.2A
Ω VGS= 4.5V, ID= 2.8A
S VDS= 15V, ID= 2.5A
pF
pF VDS= 15V, VGS=0V
f=1MHz
pF
ns
ns VDD= 15V, VGS= 10V
ID= 1A
ns RG ≈ 6.0Ω
ns
nC VDS= 15V, VGS= 10V
nC ID= 2.5A
nC
1.2 V IS= 1.25A, VGS=0V
ns Tj=25oC, IF=1.6A
nC di/dt=100A/s
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing.
(‡) Switching characteristics are independent of operating junction temperature.
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
4페이지 Package outline - SOT23
E
ZXMN3F30FH
b
3 leads
e
e1
L1 E1
D
A
A1 L c
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min. Max. Min. Max.
Min. Max. Min. Max.
A
-
1.12
-
0.044
e1
1.90 NOM
0.075 NOM
A1 0.01 0.10 0.0004 0.004 E
2.10 2.64 0.083 0.104
b
0.30 0.50 0.012 0.020 E1
1.20 1.40 0.047 0.055
c 0.085 0.20 0.003 0.008 L
0.25 0.60 0.0098 0.0236
D
2.80 3.04 0.110 0.120 L1
0.45 0.62 0.018 0.024
e
0.95 NOM
0.037 NOM
-
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
7
www.zetex.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ ZXMN3F30FH.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
ZXMN3F30FH | 30V SOT23 N-channel enhancement mode MOSFET | Zetex Semiconductors |
ZXMN3F30FHTA | 30V SOT23 N-channel enhancement mode MOSFET | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |