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부품번호 | ZXMN3F318DN8TA 기능 |
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기능 | 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 12 페이지수
DISCONTINUED
Part no.
ZXMN3F318DN8
30V SO8 Asymmetrical dual N-channel enhancement mode
MOSFET
Summary
Device V(BR)DSS QG (nC)
Q1 30 12.9
Q2 30
9
RDS(on) (Ω)
0.024 @ VGS= 10V
0.039 @ VGS= 4.5V
0.035 @ VGS= 10V
0.055 @ VGS= 4.5V
ID (A)
7.3
5.7
6
4.8
Description
This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
with low (4.5V) gate drive.
Features
• Low on-resistance
• 4.5V gate drive capability
• Low profile SOIC package
Applications
• DC-DC Converters
• SMPS
• Load switching
• Motor control
• Backlighting
Q2 Q1
Ordering information
Device
ZXMN3F318DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
Device marking
ZXMN
3F318
Pinout – top view
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
DISCONTINUEDZXMN3F318DN8
Q1 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
30
1.0
0.5
100
3.0
0.024
V ID= 250μA, VGS=0V
μA VDS= 30V, VGS=0V
nA VGS=±20V, VDS=0V
V ID= 250μA, VDS=VGS
Ω VGS= 10V, ID= 7.0A
Forward Transconductance (1) (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
0.039
16.5
608
132
71
2.9
3.3
16
8
12.9
2.5
2.52
0.82 1.2
Reverse Recovery Time (3)
trr
12
Reverse Recovery Charge (3)
Qrr
4.8
(1) Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
Ω VGS= 4.5V, ID = 6.0A
S VDS= 15V, ID= 7A
pF VDS= 15V, VGS=0V
pF f=1MHz
pF
ns VDD= 15V, ID= 1A
ns RG≅6.0Ω, VGS= 10V
ns
ns
nC VDS= 15V, VGS= 10V
nC ID= 7A
nC
V Tj=25°C, IS= 1.7A,
VGS=0V
ns Tj=25°C, IS= 2.2A,
nC di/dt=100A/µs
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
4페이지 DISCONTINUEDZXMN3F318DN8
Q2 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
30
1.0
0.5
100
3.0
0.035
V ID= 250μA, VGS=0V
μA VDS= 30V, VGS=0V
nA VGS=±20V, VDS=0V
V ID= 250μA, VDS=VGS
Ω VGS= 10V, ID= 5.0A
Forward Transconductance (1) (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
0.055
11.8
430
101
56
2.5
3.3
11.5
6.3
9
1.7
2
0.82 1.2
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
trr
Qrr
12
4.9
1 Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
2 Switching characteristics are independent of operating junction temperature.
3 For design aid only, not subject to production testing.
Ω VGS= 4.5V, ID = 4A
S VDS= 15V, ID= 5A
pF VDS= 15V, VGS=0V
pF f=1MHz
pF
ns VDD= 15V, ID= 1A
ns RG≅6.0Ω, VGS= 10V
ns
ns
nC VDS= 15V, VGS= 10V
nC ID= 5A
nC
V Tj=25°C, IS= 1.7A,
VGS=0V
ns Tj=25°C, IS= 2.1A,
nC di/dt=100A/µs
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
7
www.zetex.com
7페이지 | |||
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ZXMN3F318DN8TA | 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |