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부품번호 | ZXMN3G32DN8TA 기능 |
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기능 | 30V SO8 dual N-channel enhancement mode MOSFET | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 8 페이지수
ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS
30
RDS(on) (Ω)
0.028 @ VGS= 10V
0.045 @ VGS= 4.5V
ID (A)
7.1
5.6
Description
This new generation Trench MOSFET from Zetex features low on-
resistance and fast switching speed.
Features
• Low on-resistance
• 4.5V gate drive capability
• Fast switching bullet
D1
G1
Applications
• DC-DC Converters
• Power management functions
• Motor Control
• Backlighting
Ordering information
DEVICE
ZXMN3G32DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S1
S1
G1
S2
G2
Device marking
ZXMN
3G32D
G2
D2
S2
D1
D1
D2
D2
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3G32DN8
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate-Source Threshold
Voltage
Static Drain-Source
On-State Resistance (*)
Forward
Transconductance(*)(†)
Dynamic (†)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Switching (‡)(†)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Source-drain diode
Diode Forward Voltage(*)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Min.
30
1.0
Typ.
12
472
178
65
2.5
3.1
14
9.7
10.5
1.86
2.3
0.68
Max. Unit Conditions
0.5
100
3.0
0.028
0.045
V ID= 250µA, VGS=0V
µA VDS= 30V, VGS=0V
nA VGS=±20V, VDS=0V
V ID= 250µA, VDS=VGS
Ω VGS= 10V, ID= 6.0A
Ω VGS= 4.5V, ID= 4.9A
S VDS= 15V, ID= 6.0A
pF
pF VDS= 15V, VGS=0V
f=1MHz
pF
ns
ns VDD= 15V, ID= 1A
RG ≅ 6.0Ω, VGS=10V
ns
ns
nC VDS= 15V, VGS= 10V
nC ID= 6A
nC
1.2 V Tj=25°C, IS= 1.7A,
VGS=0V
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing
(‡) Switching characteristics are independent of operating junction temperature.
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
4페이지 Package outline - SO8
ZXMN3G32DN8
DIM Inches
Millimeters
DIM
Inches
Millimeters
Min. Max. Min. Max.
Min. Max. Min. Max.
A
0.053 0.069 1.35
1.75
e
0.050 BSC
1.27 BSC
A1 0.004 0.010 0.10 0.25
b
0.013 0.020 0.33
0.51
D
0.189 0.197 4.80
5.00
c
0.008 0.010 0.19
0.25
H
0.228 0.244 5.80
6.20
⍜
0°
8°
0°
8°
E
0.150 0.157 3.80
4.00
h
0.010 0.020 0.25
0.50
L
0.016 0.050 0.40
1.27
-
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
7
www.zetex.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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ZXMN3G32DN8TA | 30V SO8 dual N-channel enhancement mode MOSFET | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |