|
|
|
부품번호 | ZXMN6A08K 기능 |
|
|
기능 | 60V N-CHANNEL ENHANCEMENT MODE MOSFET | ||
제조업체 | Diodes | ||
로고 | |||
전체 8 페이지수
A Product Line of
Diodes Incorporated
ZXMN6A08K
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(on)
80mΩ @ VGS= 10V
150mΩ @ VGS= 4.5V
ID
TA = 25°C
7.90A
5.75A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” component and RoHS compliant (Note 1)
Mechanical Data
• Case: TO-252
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
DD
TOP VIEW
D
GS
PIN OUT -TOP VIEW
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product
ZXMN6A08KTC
Marking
See Below
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
6A08
YYWW
ZXMN = Product Type Marking Code, Line 1
6A08 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXMN6A08K
Document Revision: 2
1 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A08K
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
BVDSS
IDSS
IGSS
60
⎯
⎯
VGS(th)
1.0
Typ
⎯
⎯
⎯
⎯
Static Drain-Source On-Resistance (Note 7)
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
gfs ⎯ 6.6
VSD ⎯ 0.88
trr 19.2
Qrr ⎯ 30.3
Ciss ⎯ 459
Coss ⎯ 44.2
Crss ⎯ 24.1
Qg ⎯ 3.8
Qg ⎯ 5.8
Qgs ⎯ 1.4
Qgd ⎯ 1.9
tD(on)
⎯
2.6
tr ⎯ 2.1
tD(off) ⎯ 12.3
tf ⎯ 4.6
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Max
⎯
0.5
±100
3.0
0.080
0.150
⎯
0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit Test Condition
V ID = 250μA, VGS= 0V
μA VDS= 60V, VGS= 0V
nA VGS= ±20V, VDS= 0V
V ID= 250μA, VDS= VGS
Ω VGS= 10V, ID= 4.8A
VGS= 4.5V, ID= 4.2A
S VDS= 15V, ID= 4.8A
V IS= 4.0A, VGS= 0V
ns
nC IS= 1.4A, di/dt= 100A/μs
pF
pF VDS= 40V, VGS= 0V
f= 1MHz
pF
nC VGS= 4.5V
nC
nC VGS= 10V
nC
VDS= 30V
ID= 1.4A
ns
ns VDD= 30V, VGS= 10V
ns ID= 1.5A, RG ≅ 6.0Ω
ns
ZXMN6A08K
Document Revision: 2
4 of 8
www.diodes.com
July 2009
© Diodes Incorporated
4페이지 Package Outline Dimensions
A Product Line of
Diodes Incorporated
ZXMN6A08K
DIM Inches
Millimeters
DIM
Inches
Millimeters
Min Max Min Max
Min Max Min Max
A
0.086
0.094
2.18
2.39
e
0.090 BSC
2.29 BSC
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1 0.205
-
5.21
-
θ1° 0° 10° 0° 10°
E
0.250
0.265
6.35
6.73
θ°
0° 15° 0° 15°
E1 0.170
-
4.32
-
-
-
-
-
-
ZXMN6A08K
Document Revision: 2
7 of 8
www.diodes.com
July 2009
© Diodes Incorporated
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ ZXMN6A08K.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
ZXMN6A08E6 | 60V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
ZXMN6A08E6Q | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |