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부품번호 | ZXMN6A25N8 기능 |
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기능 | 60V SO8 N-channel enhancement mode MOSFET | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 8 페이지수
ZXMN6A25N8
60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) (Ω)
0.050 @ VGS=10V
0.070 @ VGS=4.5V
ID(A)
7.0
Description
This new generation Trench MOSFET from
Zetex features low on-resistance and fast switching,
making it ideal for high efficiency power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low gate drive
• SO8 package
Applications
• DC-DC Converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMN6A25N8TA
Reel size
(inches)
7
Device marking
ZXMN6A25
Tape width
(mm)
12
Quantity
per reel
500
D
G
S
SD
SD
SD
GD
Top view
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN6A25N8
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Drain-Source breakdown
voltage
Zero gate voltage drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance (*)
Forward
Transconductance (*) (†)
Dynamic (†)
Symbol Min.
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
60
1
Typ. Max. Unit Conditions
10.2
1.0
100
3
0.050
0.070
V ID =250μA, VGS=0V
µA VDS=60V, VGS=0V
nA VGS=±20V, VDS=0V
V ID=250μA, VDS=VGS
Ω VGS= 10V, ID= 3.6A
VGS= 4.5V, ID= 3.0A
S VDS= 15V, ID= 4.5A
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching (‡) (†)
Ciss
Coss
Crss
1063
104
64
pF
pF VDS= 30V, VGS=0V
pF f=1MHz
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
td(on)
tr
td(off)
tf
Qg
Total gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Diode forward voltage (*)
Reverse recovery time (‡)
Reverse recovery charge(‡)
Qg
Qgs
Qgd
VSD
trr
Qrr
3.8
4.0
26.2
10.6
11.0
20.4
4.1
5.1
ns
ns VDD= 30V, VGS= 10V
ns ID= 1A
RG ≅ 6.0Ω,
ns
nC VDS= 30V, VGS= 5V
ID= 4.5A
nC
nC VDS= 30V, VGS= 10V
nC ID= 4.5A
0.85
22.0
21.4
0.95
V IS= 5.5A,VGS=0V
ns
IS= 2.2A,di/dt=100A/μs
nC
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
4페이지 Package outline SO8
ZXMN6A25N8
SO8 Package Information
DIM Inches
Millimeters
DIM
Inches
Millimeters
Min. Max. Min. Max.
Min. Max. Min. Max.
A
0.053 0.069 1.35
1.75
e
0.050 BSC
1.27 BSC
A1 0.004 0.010 0.10 0.25
b
0.013 0.020 0.33
0.51
D
0.189 0.197 4.80
5.00
c
0.008 0.010 0.19
0.25
H
0.228 0.244 5.80
6.20
U
0°
8°
0°
8°
E
0.150 0.157 3.80
4.00
h
0.010 0.020 0.25
0.50
L
0.016 0.050 0.40
1.27
-
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
7
www.zetex.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
ZXMN6A25N8 | 60V SO8 N-channel enhancement mode MOSFET | Zetex Semiconductors |
ZXMN6A25N8TA | 60V SO8 N-channel enhancement mode MOSFET | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |