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부품번호 | ZXMN2AMC 기능 |
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기능 | 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | ||
제조업체 | Diodes | ||
로고 | |||
전체 8 페이지수
A Product Line of
Diodes Incorporated
ZXMN2AMC
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(on) max
120mΩ @ VGS= 4.5V
300mΩ @ VGS= 2.5V
ID max
TA = 25°C
(Notes 4 & 7)
3.7A
2.3A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• DC-DC Converters
• Power management functions
• Disconnect switches
• Portable applications
Features and Benefits
• Low profile package, for thin applications
• Low Rthj-a, thermally efficient package
• 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6
• Low on-resistance
• Fast switching speed
• “Lead-Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN3020B-8
• Terminals: Pre-Plated NiPdAu leadframe
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
DFN3020B-8
D2 D2 D1 D1
D1 D2
Top View
Bottom View
D2 D1
G1
G2 S2 G1 S1
Bottom View
Pin-Out
Pin 1
G2
S1 S2
Equivalent Circuit
Ordering Information (Note 3)
Part Number
ZXMN2AMCTA
Marking
DNA
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
3000
Marking Information
DNA
DNA = Product Type Marking Code
Top View, Dot Denotes Pin 1
ZXMN2AMC
Document number: DS35089 Rev. 1 - 2
1 of 8
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN2AMC
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
20
-
-
0.7
Static Drain-Source On-Resistance (Note 10)
RDS (ON)
-
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
gfs
VSD
trr
Qrr
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Notes:
10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
Typ
-
-
-
-
0.085
0.140
6.2
0.9
23
5.7
299
60
33
0.8
3.1
0.7
1.0
2.3
2.6
1.6
1.3
Max
-
1
±100
3.0
0.120
0.300
-
0.95
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V ID = 250μA, VGS = 0V
μA VDS = 20V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V ID = 250μA, VDS = VGS
Ω VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 1.5A
S VDS = 10V, ID = 4A
V IS = 3.2A, VGS = 0V
ns
nC IS = 4A, di/dt = 100A/µs
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
nC VGS = 2.5V
nC
nC VGS = 4.5V
VDS = 10V
ID = 4A
nC
ns
ns VDS = 10V, ID = 4A
ns VGS = 5V, RG = 6Ω
ns
ZXMN2AMC
Document number: DS35089 Rev. 1 - 2
4 of 8
www.diodes.com
December 2010
© Diodes Incorporated
4페이지 Package Outline Dimensions
A
A1
D
A3
D4
E D2
Zb
L
D4
E2
e
Suggested Pad Layout
A Product Line of
Diodes Incorporated
ZXMN2AMC
DFN3020B-8
Dim Min Max Typ
A 0.77 0.83 0.80
A1 0 0.05 0.02
A3 -
- 0.15
b 0.25 0.35 0.30
D 2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e-
- 0.65
E 1.95 2.075 2.00
E2 0.43 0.63 0.53
L 0.25 0.35 0.30
Z-
- 0.375
All Dimensions in mm
CX
G1
G
Y2
Y1
Y
X1
Dimensions
C
G
G1
X
X1
Y
Y1
Y2
Value (in mm)
0.650
0.285
0.090
0.400
1.120
0.730
0.500
0.365
ZXMN2AMC
Document number: DS35089 Rev. 1 - 2
7 of 8
www.diodes.com
December 2010
© Diodes Incorporated
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