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부품번호 | IRFIB7N50A 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | Vishay | ||
로고 | |||
전체 8 페이지수
IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
52
13
18
Single
0.52
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective Coss Specified
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge Convertors
• Power Factor Correction Boost
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFIB7N50APbF
SiHFIB7N50A-E3
IRFIB7N50A
SiHFIB7N50A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currentf
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Repetitive Avalanche Currenta, e
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 4.5 mH, RG = 25 Ω, IAS = 11 A (see fig. 12).
c. ISD ≤ 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFB11N50A, SiHFB11N50A data and test conditions.
f. Drain current limited by maximum junction temperature.
LIMIT
500
± 30
6.6
4.2
44
0.48
275
11
6.0
60
6.9
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91176
S09-0517-Rev. B, 13-Apr-09
www.vishay.com
1
IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
2400
2000
1600
1200
Ciss
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
800
Crss
400
0A
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 161.6AA
16
12
VDS = 400 V
VDS = 250 V
VDS = 100 V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25° C
VGS = 0 V
0.1
0.0 0.4 0.8 1.2 1.6
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10 100us
1ms
1 10ms
TC = 25°C
TJ = 150°C
Single Pulse
0.1
10 100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10000
www.vishay.com
4
Document Number: 91176
S09-0517-Rev. B, 13-Apr-09
4페이지 IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
D.U.T .
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-+
RG
• dV/dt controlled by R G
+
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
- VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode
Inductor current
forward drop
Ripple ≤ 5 %
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
VDD
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91176.
Document Number: 91176
S09-0517-Rev. B, 13-Apr-09
www.vishay.com
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRFIB7N50A | Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=6.6A) | International Rectifier |
IRFIB7N50A | Power MOSFET ( Transistor ) | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |