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PDF RJK6026DPE Data sheet ( Hoja de datos )
| Número de pieza | RJK6026DPE | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK6026DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G1479-0100
Rev.1.00
Jul 02, 2009
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
±30
5
20
5
20
4
0.87
62.5
2
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1479-0100 Rev.1.00 Jul 02, 2009
Page 1 of 6
1 page  
RJK6026DPE
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1 D=1
0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
1shot
pulse
θch – c(t) = γ s (t) • θ ch – c
θch – c = 2°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m 100 m
1
10 100 1000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1479-0100 Rev.1.00 Jul 02, 2009
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6026DPE.PDF ] | |
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