|
|
PDF NP70N04MUG Data sheet ( Hoja de datos )
| Número de pieza | NP70N04MUG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NP70N04MUG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP70N04MUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP70N04MUG-S18-AY Note
Pure Sn (Tin)
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
FEATURES
• Super low on-state resistance
RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 35 A)
• Channel temperature 175 degree rated
(TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±70
±280
115
1.8
175
−55 to +175
37
137
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.30
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18664EJ4V0DS00 (4th edition)
Date Published April 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
1 page  
NP70N04MUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
VGS = 10 V
ID = 35 A
6
4
2
0
-75
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1000
100
SWITCHING CHARACTERISTICS
td(on)
td(off)
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
10 tr
1
0.1
1000
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
100
VGS = 10 V
10
0V
1
0.1
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
Crss
VGS = 0 V
f = 1 MHz
100
0.01 0.1 1 10
VDS - Drain to Source Voltage - V
100
<R>
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
30
VDD = 32 V
25 20 V
8V
20
12
10
8
15
10
5
0
0
6
VGS
4
VDS
2
ID = 70 A
0
20 40 60 80 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Data Sheet D18664EJ4V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP70N04MUG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NP70N04MUG | N-CHANNEL POWER MOS FET | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |