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PDF IRL2910SPbF Data sheet ( Hoja de datos )
| Número de pieza | IRL2910SPbF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95149
IRL2910S/LPbF
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
AprobfsileoalupptleicaMtioanxs.imum Ratings
G
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 0.026Ω
ID = 55A
S
D 2 Pak
T O -26 2
Max.
55
39
190
3.8
200
1.3
± 16
520
29
20
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
04/19/04
1 page  
IRL2910S/LPbF
50
40
30
20
10
0A
25 50 75 100 125 150 175
TC , C ase Tem perature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0 .20
0.1 0 .10
0.05
0 .02
0.01
0.01
0.00001
PD M
S IN G LE P U LS E
(THERMAL RESPONSE)
t1
t2
Notes:
1. D uty factor D = t1 / t 2
2. P eak TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
t1 , Re ctan gular Pulse Du ration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
5 Page 
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRL2910SPbF.PDF ] | |
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