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IRF1405ZPbF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1405ZPbF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IRF1405ZPbF 기능
기능 HEXFET Power MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


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IRF1405ZPbF 데이터시트, 핀배열, 회로
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
PD - 97018A
IRF1405ZPbF
IRF1405ZSPbF
IRF1405ZLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
G RDS(on) = 4.9m
S ID = 75A
TO-220AB
D2Pak
TO-262
IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
iJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
150
110
75
600
230
1.5
± 20
270
420
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/14/10




IRF1405ZPbF pdf, 반도체, 판매, 대치품
IRF1405Z/S/LPbF
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12.0
10.0
ID= 75A
8.0
VDS= 44V
VDS= 28V
6.0
4.0
2.0
0.0
0
20 40 60 80 100
QG Total Gate Charge (nC)
120
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.00
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com

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IRF1405ZPbF 전자부품, 판매, 대치품
IRF1405Z/S/LPbF
10000
1000
Duty Cycle = Single Pulse
100 0.01
0.05
10 0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
300
TOP
Single Pulse
BOTTOM 10% Duty Cycle
250 ID = 75A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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HEXFET Power MOSFET

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