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부품번호 | NP60N055NUK 기능 |
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기능 | MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
Preliminary Data Sheet
NP60N055MUK, NP60N055NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0598EJ0100
Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A)
Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP60N055MUK-S18-AY *1
NP60N055NUK-S18-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-220 (MP-25K)
TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 0 V
Ratings
55
20
60
240
105
1.8
175
–55 to 175
25
63
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43 °C/W
83.3 °C/W
R07DS0598EJ0100 Rev.1.00
Jan 11, 2012
Page 1 of 6
NP60N055MUK, NP60N055NUK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
250
200
150
100
50 VGS = 10 V
Pulsed
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
VDS = VGS
ID = 250 μA
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
12
10
8
6
4
2 VGS = 10 V
Pulsed
0
1 10 100 1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = –55°C
25°C
85°C
150°C
1 175°C
0.1
0.01
0.001
0
VDS = 10 V
Pulsed
123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = –55°C
25°C
85°C
150°C
175°C
10
VDS = 5 V
Pulsed
1
0.1 1
10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
12
10
8
6
4
2 ID = 30 A
Pulsed
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
R07DS0598EJ0100 Rev.1.00
Jan 11, 2012
Page 4 of 6
4페이지 Revision History
NP60N055MUK, NP60N055NUK Data Sheet
Rev.
1.00
Date
Jan 11, 2012
Page
— First Edition Issued
Description
Summary
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NP60N055NUK | MOS FIELD EFFECT TRANSISTOR | Renesas |
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