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부품번호 | NP109N055PUJ 기능 |
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기능 | N-CHANNEL POWER MOS FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N055PUJ
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP109N055PUJ-E1B-AY Note
NP109N055PUJ-E2B-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low input capacitance
Ciss = 6900 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TC = 25°C)
PT1
220
Total Power Dissipation (TA = 25°C)
PT2
1.8
Channel Temperature
Tch 175
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg −55 to +175
EAS 291
IAR 54
EAR 291
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.68
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19729EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
NP109N055PUJ
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
300
200
100
0
0
VGS = 10 V
Pulsed
0.4 0.8 1.2
VDS - Drain to Source Voltage - V
1.6
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
-100
VDS = VGS
ID = 250 μA
-50 0 50 100 150
Tch - Channel Temperature - °C
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
6
VGS = 10 V
5 Pulsed
4
3
2
1
0
1 10 100 1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
TA = −55°C
10
25°C
85°C
1
150°C
175°C
0.1
0.01
0.001
1
VDS = 10 V
Pulsed
234
VGS - Gate to Source Voltage - V
5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
TA = −55°C
25°C
100 85°C
10
1
1
150°C
175°C
VDS = 5 V
Pulsed
10 100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
ID = 55 A
5 Pulsed
4
3
2
1
0
0 5 10 15 20 25
VGS - Gate to Source Voltage - V
4 Data Sheet D19729EJ1V0DS
4페이지 TAPE INFORMATION
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
NP109N055PUJ
Draw-out side
−-* 6;2-
MARKING INFORMATION
NEC
109N055
UJ
Reel side
−- * 6;2-
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP109N055PUJ should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Partial heating
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Recommended
Condition Symbol
IR60-00-3
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19729EJ1V0DS
7
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부품번호 | 상세설명 및 기능 | 제조사 |
NP109N055PUJ | N-CHANNEL POWER MOS FET | Renesas |
NP109N055PUK | MOS FIELD EFFECT TRANSISTOR | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |