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부품번호 | HB56A132SBW 기능 |
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기능 | High Density Dynamic RAM Module | ||
제조업체 | Hitachi Semiconductor | ||
로고 | |||
전체 9 페이지수
HB56A132 Series
1,048,576-word × 32-Bit High Density Dynamic RAM Module
ADE-203-
Rev. 0.0
Dec. 1, 1995
Description
The HB56A132 is a 1 M × 32 dynamic RAM module, mounted 8 pieces of (4-Mbit) DRAM
(HM514400CS/CLS) sealed in SOJ package. An outline of the HB56A132 is 72-pin single in-line package.
Therefore, the HB56A132 makes high density mounting possible without surface mount technology. The
HB56A132 provides common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ.
Features
• 72-pin single in-line package
— Lead pitch: 1.27 mm
• Single 5 V (± 5%) supply
• High speed
— Access time: 60 ns/70 ns/80 ns (max)
• Low power dissipation
— Active mode: 4.62W/4.20W/3.78W (max)
— Standby mode: 84 mW (max)
4.2 mW (max) (L-version)
• Fast page mode capability
• 1,024 refresh cycle: 16 ms
128 ms (L-version)
• 2 variations of refresh
— RAS only refresh
— CAS before RAS refresh
• TTL compatible
HB56A132 Series
Pin Description
Pin name
A0 – A9
A0 – A9
DQ0 – DQ31
CAS0 – CAS3
RAS0, RAS2
WE
VCC
VSS
PD1 – PD4
NC
Function
Address input
Refresh address input
Data-in/data-out
Column address strobe
Row address strobe
Read/write enable
Power supply (+5 V)
Ground
Presence detect pin
No connection
Presence Detect Pin Pinout
Pin No.
67
68
69
70
Pin name
PD1
PD2
PD3
PD4
HB56A132
60 ns
VSS
VSS
NC
NC
70 ns
VSS
VSS
VSS
NC
80 ns
VSS
VSS
NC
VSS
4
4페이지 HB56A132 Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 5%, VSS = 0V)
HB56A132
60 ns
70 ns
80 ns
Parameter
Symbol Min Max Min Max Min Max Unit Test conditions
Notes
Operating current ICC1 — 880 — 800 — 720 ma tRC = min
Standby current
ICC2 — 16 — 16 — 16 mA TTL interface,
RAS, CAS = VIH,
Dout = High-Z
1, 2
— 8 — 8 — 8 mA CMOS interface,
RAS, CAS
≥ VCC – 0.2 V
Dout = High-Z
Standby current
(L-version)
ICC2 — 0.8 — 0.8 — 0.8 mA CMOS interface,
RAS, CAS = VIH
WE, Address.,
Din = VIH or VIL
Dout = High-Z
4
RAS-only refresh ICC3 — 880 — 800 — 720 mA tRC = min
current
2
Standby current
ICC5 — 40 — 40 — 40 mA RAS = VIH,
CAS = VIL
Dout = enable
1
CAS before RAS ICC6 — 880 — 800 — 720 mA tRC = min
refresh current
Page mode current
Battery backup
operation current
(CBR refresh)
(L-version)
I CC7
I CC10
— 880 —
— 1.6 —
800 —
1.6 —
720 mA
1.6 mA
tPC = min
1, 3
tRC = 125 µs, tRAS ≤ 1 µs, 4
WE = VIH, CAS = VIL
Address, Din = VIH or VIL
Dout = High-Z
Input leakage current
Output leakage
current
I LI
I LO
–10 10 –10 10 –10 10 µA 0 V ≤ Vin ≤ 7 V
–10 10 –10 10 –10 10 µA 0 V ≤ Vout ≤ 7 V
Dout = disable
Output high voltage VOH
2.4 VCC 2.4 VCC 2.4 VCC V High Iout = –5 mA
Output low voltage VOL 0 0.4 0 0.4 0 0.4 V Low Iout = 4.2 mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output
open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. VCC – 0.2 V ≤ VIH ≤ 6.5 V, 0 V ≤ VIL ≤ 0.2 V
7
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ HB56A132SBW.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HB56A132SBW | High Density Dynamic RAM Module | Hitachi Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |