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부품번호 | HB56D136BW 기능 |
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기능 | High Density Dynamic RAM Module | ||
제조업체 | Hitachi Semiconductor | ||
로고 | |||
전체 10 페이지수
HB56D136 Series
1,048,576-word × 36-bit High Density Dynamic RAM Module
ADE-203-209A (Z)
Rev 1.0
Sept. 20, 1994
Description
The HB56D136 is a 1-M × 36-bit dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM
(HM514400CS/CLS) sealed in SOJ package and 2 pieces of 2 Mbit DRAM (HM512200BS/BLS) sealed in
SOJ package. An outline of the HB56D136 is 72-pin single in-line package.
Therefore, the HB56D136 makes high density mounting possible without surface mount technology. The
HB56D136 provides common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ.
Features
• 72-pin
— Lead pitch: 1.27 mm
• Single 5 V (±5%) supply
• High speed
— Access time: 60 ns/70 ns/80 ns (max)
• Low power dissipation
— Active mode: 5.46 W/4.94 W/4.41 W (max)
— Standby mode: 105 mW (max)
5.25 mW (max) (L-version)
• Fast page mode capability
• 1,024 refresh cycle: 16 ms
128 ms (L-version)
• 3 variations of refresh
— RAS only refresh
— CAS-before-RAS refresh
— Hidden refresh
• TTL compatible
HB56D136 Series
Pin Description
Pin Name
Function
A0 – A9
Address input
A0 – A9
Refresh address input
DQ0 – DQ35 Data-in/data-out
CAS0 – CAS3 Column address strobe
RAS0, RAS2 Row address strobe
WE Read/write enable
VCC
VSS
PD1 – PD4
Power supply (+5 V)
Ground
Presence detect pin
NC No connection
Presence Detect Pinout
Pin No.
67
68
69
70
Pin Name
PD1
PD2
PD3
PD4
HB56D136
60 ns 70 ns
VSS
VSS
VSS
VSS
NC VSS
NC NC
80 ns
VSS
VSS
NC
VSS
4
4페이지 HB56D136 Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 5%, VSS = 0V)
HB56D136
60 ns
70 ns
80 ns
Parameter
Symbol Min Max Min Max Min Max Unit Test Conditions
Notes
Operating current
Standby current
I CC1
I CC2
— 1040 — 940 — 840 mA RAS, CAS cycling,
tRC = min
— 20 — 20 — 20 mA TTL interface
RAS, CAS = VIH
Dout = High-Z
1, 2
— 10 — 10 — 10 mA CMOS interface
RAS, CAS ≥ VCC – 0.2 V
Dout = High-Z
Standby current ICC2 — 1.0 — 1.0 — 1.0 mA CMOS interface
4
(L-version)
RAS, CAS = VIH
WE, Add., Din = VIH or VIL
Dout = High-Z
RAS-only
refresh current
ICC3 — 1040 — 940 — 840 mA tRC = min
2
Standby current
I CC5
— 50 — 50 — 50 mA RAS = VIH, CAS = VIL
1
Dout = enable
CAS before RAS
refresh current
I CC6
— 1040 — 940 — 840 mA tRC = min
First page mode ICC7 — 1000 — 900 — 800 mA tPC = min
current
1, 3
Battery backup
ICC10 — 2.0 — 2.0 — 2.0 mA tRC = 125 µs
operating current
tRAS ≤ 1 µs
(Standby with
WE = VIH, CAS = VIL
CBR refresh)
Add., Din = VIH or VIL
(L-version)
Dout = High-Z
4
Input leakage current ILI
Output leakage
current
I LO
–10 10 –10 10 –10 10 µA 0 V ≤ Vin ≤ 7 V
–10 10 –10 10 –10 10 µA 0 V ≤ Vout ≤ 7 V
Dout = disable
Output high voltage VOH
2.4 VCC 2.4 VCC 2.4 VCC V High Iout = –5 mA
Output low voltage VOL
0 0.4 0 0.4 0 0.4 V Low Iout = 4.2 mA
Notes: 1. ICC depends on output load condition when the device is selected ICC max is specified at the output
open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. VCC – 0.2 V ≤ VIH ≤ 6.5 V and 0 ≤ VIL ≤ 0.2 V.
7
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ HB56D136BW.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HB56D136BW | High Density Dynamic RAM Module | Hitachi Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |