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PDF STD65N55 Data sheet ( Hoja de datos )
| Número de pieza | STD65N55 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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General features
STD65N55
N-channel 55V - 8.0mΩ - 65A - DPAK
MDmesh™ low voltage Power MOSFET
PRELIMINARY DATA
Type
STD65N55
VDSS
55V
RDS(on)
<10.5mΩ
ID Pw
65A 110W
■ Standard threshold drive
■ 100% avalanche tested
Description
This N-Channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique “Single Feature Size™“
strip-based process with less critical aligment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Applications
■ Switching application
– Automotive
3
1
DPAK
Internal schematic diagram
Order codes
Part number
STD65N55
Marking
D65N55
Package
DPAK
Packaging
Tape & reel
July 2006
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
11
1 page  
STD65N55
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test condictions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 3)
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 3)
Min. Typ. Max. Unit
20 ns
50 ns
35 ns
11.5 ns
Table 6.
Symbol
Source drain diode
Parameter
Test condictions Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
VSD Forward on voltage
ISD = 65A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 65A, VDD = 30V
di/dt = 100A/µs,
Tj = 150°C(see Figure 5)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
65 A
260 A
1.5 V
47 ns
87 nC
3.7 A
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STD65N55
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