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Datasheet 74VHC541 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 74VHC541 | OCTAL BUS BUFFER 74VHC541
OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)
s HIGH SPEED: tPD = 3.5 ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 4 µA (MAX.) at TA=25°C
s HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
)s POWER DOWN PROTECTION ON INPUTS t(ss SYMMETRICAL OUTPUT IMPEDANCE: c|IOH| = |  STMicroelectronics | buffer |
| 2 | 74VHC541 | Octal Buffer/Line Driver with 3-STATE Outputs 74VHC541 Octal Buffer/Line Driver with 3-STATE Outputs
August 1993 Revised May 2005
74VHC541 Octal Buffer/Line Driver with 3-STATE Outputs
General Description
The VHC541 is an advanced high-speed CMOS device fabricated with silicon gate CMOS technology. It achieves the high-speed operation simila |  Fairchild Semiconductor | driver |
| 3 | 74VHC541 | Octal buffer/line driver 74VHC541; 74VHCT541
Octal buffer/line driver; 3-state
Rev. 01 — 12 August 2009
Product data sheet
1. General description
The 74VHC541; 74VHCT541 are high-speed Si-gate CMOS devices. The 74VHC541; 74VHCT541 are octal non-inverting buffer/line drivers with 3-state bus compatible outputs. The 3-st |  NXP Semiconductors | driver |
| 4 | 74VHC541-Q100 | Octal buffer/line driver 74VHC541-Q100; 74VHCT541-Q100
Octal buffer/line driver; 3-state
Rev. 1 — 4 June 2013
Product data sheet
1. General description
The 74VHC541-Q100; 74VHCT541-Q100 are high-speed Si-gate CMOS devices.
The 74VHC541-Q100; 74VHCT541-Q100 are octal non-inverting buffer/line drivers with 3-state bus com | NXP Semiconductors | driver |
| 5 | 74VHC541M | OCTAL BUS BUFFER WITH 3 STATE OUTPUTS NON INVERTED ®
74VHC541
OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)
s s
s
s s
s
s
s
s s
HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPED | STMicroelectronics | buffer |
74V Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 74V1G00 | SINGLE 2-INPUT NAND GATE ®
74V1G00
SINGLE 2-INPUT NAND GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BAL STMicroelectronics gate | | |
| 2 | 74V1G00C | SINGLE 2-INPUT NAND GATE ®
74V1G00
SINGLE 2-INPUT NAND GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BAL STMicroelectronics gate | | |
| 3 | 74V1G00S | SINGLE 2-INPUT NAND GATE ®
74V1G00
SINGLE 2-INPUT NAND GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BAL STMicroelectronics gate | | |
| 4 | 74V1G02 | SINGLE 2-INPUT NOR GATE ®
74V1G02
SINGLE 2-INPUT NOR GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALA STMicroelectronics gate | | |
| 5 | 74V1G02C | SINGLE 2-INPUT NOR GATE ®
74V1G02
SINGLE 2-INPUT NOR GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALA STMicroelectronics gate | | |
| 6 | 74V1G02S | SINGLE 2-INPUT NOR GATE ®
74V1G02
SINGLE 2-INPUT NOR GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALA STMicroelectronics gate | | |
| 7 | 74V1G03 | SINGLE 2-INPUT OPEN DRAIN NAND GATE ®
74V1G03
SINGLE 2-INPUT OPEN DRAIN NAND GATE
PRELIMINARY DATA
s s
s
s s
s
HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS OPERATING VOLTAGE RANGE: VCC (OPR) = STMicroelectronics gate | |
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