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74VHC541 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 74VHC541
기능 Octal buffer/line driver
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74VHC541 데이터시트, 핀배열, 회로
74VHC541; 74VHCT541
Octal buffer/line driver; 3-state
Rev. 01 — 12 August 2009
Product data sheet
1. General description
The 74VHC541; 74VHCT541 are high-speed Si-gate CMOS devices.
The 74VHC541; 74VHCT541 are octal non-inverting buffer/line drivers with 3-state bus
compatible outputs.
The 3-state outputs are controlled by the output enable inputs OE0 and OE1.
A HIGH on OEn causes the outputs to assume a high-impedance OFF-state.
2. Features
I Balanced propagation delays
I All inputs have a Schmitt-trigger action
I Inputs accepts voltages higher than VCC
I The 74VHC541 operates with CMOS input level
I The 74VHCT541 operates with TTL input level
I ESD protection:
N HBM JESD22-A114E exceeds 2000 V
N MM JESD22-A115-A exceeds 200 V
N CDM JESD22-C101C exceeds 1000 V
I Multiple package options
I Specified from 40 °C to +85 °C and from 40 °C to +125 °C
3. Ordering information
Table 1. Ordering information
Type number Package
Temperature range
74VHC541D
40 °C to +125 °C
74VHCT541D
74VHC541PW 40 °C to +125 °C
74VHCT541PW
74VHC541BQ 40 °C to +125 °C
74VHCT541BQ
Name
SO20
Description
plastic small outline package; 20 leads;
body width 7.5 mm
Version
SOT163-1
TSSOP20
plastic thin shrink small outline package; 20 leads; SOT360-1
body width 4.4 mm
DHVQFN20
plastic dual-in-line compatible thermal enhanced SOT764-1
very thin quad flat package; no leads; 20 terminals;
body 2.5 × 4.5 × 0.85 mm




74VHC541 pdf, 반도체, 판매, 대치품
NXP Semiconductors
74VHC541; 74VHCT541
Octal buffer/line driver; 3-state
6. Functional description
Table 3.
Control
OE0
L
L
X
H
Functional table[1]
OE1
L
L
H
X
[1] H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
7. Limiting values
Input
An
L
H
X
X
Output
Yn
L
H
Z
Z
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC
VI
IIK
IOK
IO
ICC
IGND
Tstg
Ptot
supply voltage
input voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
SO20 package
VI < 0.5 V
VO < 0.5 V or VO > VCC + 0.5 V
VO = 0.5 V to (VCC + 0.5 V)
Tamb = 40 °C to +125 °C
0.5
0.5
[1] 20
[1] -
-
-
75
65
+7.0
+7.0
-
±20
±25
75
-
+150
V
V
mA
mA
mA
mA
mA
°C
[2] -
500 mW
TSSOP20 package
[3] -
500 mW
DHVQFN20 package
[4] -
500 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] Ptot derates linearly with 8 mW/K above 70 °C.
[3] Ptot derates linearly with 5.5 mW/K above 60 °C.
[4] Ptot derates linearly with 4.5 mW/K above 60 °C.
74VHC_VHCT541_1
Product data sheet
Rev. 01 — 12 August 2009
© NXP B.V. 2009. All rights reserved.
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74VHC541 전자부품, 판매, 대치품
NXP Semiconductors
74VHC541; 74VHCT541
Octal buffer/line driver; 3-state
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V. For test circuit see Figure 7.
Symbol Parameter Conditions
For type 74VHC541
tpd propagation An to Yn; see Figure 5
delay
VCC = 3.0 V to 3.6 V
CL = 15 pF
CL = 50 pF
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
ten enable time OEn to Yn; see Figure 6
VCC = 3.0 V to 3.6 V
CL = 15 pF
CL = 50 pF
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
tdis disable time OEn to Yn; see Figure 6
VCC = 3.0 V to 3.6 V
CL = 15 pF
CL = 50 pF
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
CPD power
CL = 50 pF; fi = 1 MHz;
dissipation VI = GND to VCC
capacitance
25 °C
40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ[1] Max Min
Max
Min
Max
[2]
- 5.0 7.0 1.0 8.5 1.0
- 7.0 10.5 1.0 12.0 1.0
9.0 ns
13.5 ns
- 3.5 5.0 1.0
6.0
1.0
6.5 ns
5.0 7.0 1.0
8.0
1.0
9.0 ns
[2]
- 5.5 10.5 1.0 11.0 1.0
- 7.5 14.0 1.0 16.0 1.0
13.5 ns
17.5 ns
- 3.5 7.2 1.0
8.5
1.0
9.0 ns
- 5.0 9.2 1.0 10.5 1.0
11.5 ns
[2]
- 6.0 11.0 1.0 12.0 1.0
- 9.5 15.4 1.0 17.5 1.0
14.0 ns
19.5 ns
- 4.5 7.5 1.0
8.0
1.0
9.5 ns
- 6.5 8.8 1.0 10.0 1.0
11.0 ns
[3] -
10 -
-
-
-
- pF
74VHC_VHCT541_1
Product data sheet
Rev. 01 — 12 August 2009
© NXP B.V. 2009. All rights reserved.
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