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부품번호 | IRFBC30AL 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | Vishay | ||
로고 | |||
전체 11 페이지수
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
23
5.4
11
Single
I2PAK (TO-262) D2PAK (TO-263)
2.2
D
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3
Lead (Pb)-free
IRFBC30ASPbF
SiHFBC30AS-E3
Note
a. See device orientation.
D2PAK (TO-263)
SiHFBC30ASTRL-GE3a
IRFBC30ASTRLPbFa
SiHFBC30ASTL-E3a
D2PAK (TO-263)
SiHFBC30ASTRR-GE3a
IRFBC30ASTRRPbFa
SiHFBC30ASTR-E3a
I2PAK (TO-262)
SiHFBC30AL-GE3
IRFBC30ALPbF
SiHFBC30AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).
c. ISD 3.6 A, dI/dt 170 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
LIMIT
600
± 30
3.6
2.3
14
0.69
290
3.6
7.4
74
7.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
10
TJ = 150° C
TJ = 25° C
1
0.1
0.4
VGS = 0 V
0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 3.6A
16
12
VDS = 480V
VDS = 300V
VDS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 4 8 12 16 20 24
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10 10us
100us
1 1ms
TC = 25°C
TJ = 150°C
Single Pulse
0.1
10 100
10ms
1000
VDS , Drain-to-Source Voltage (V)
10000
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-+
Rg
• dV/dt controlled by Rg
+
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
- VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
VDD
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91109.
Document Number: 91109
S11-1052-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRFBC30A | Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) | International Rectifier |
IRFBC30AL | Power MOSFET ( Transistor ) | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |