(PDF) K2796 Datasheet - MOSFET ( Transistor )

Número de pieza	K2796
Descripción	MOSFET ( Transistor ) - 2SK2796
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK \|1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 1 page 2SK2796(L), 2SK2796(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 1.6 1.2 0.8 I D = 5 A 0.4 2 A 1A 0 2 4 6 8 10 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 0.2 VGS = 4 V 0.1 10 V 0.05 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 1A 2A 0.3 I D = 5 A V GS = 4 V 0.2 0.1 10 V 5A 1, 2 A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 10 Tc = –25 °C 5 25 °C 2 75 °C 1 0.5 0.2 0.1 0.1 V DS = 10 V Pulse Test 0.2 0.5 1 2 5 10 Drain Current I D (A) 5 5 Page

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PDF K2796 Data sheet ( Hoja de datos )