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2SK3870-01 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2SK3870-01
기능 N-CHANNEL SILICON POWER MOSFET
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2SK3870-01 데이터시트, 핀배열, 회로
2SK3870-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220AB
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
VDS
VDSX
ID
ID(puls]
VGS
IAR
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
Ratings
230
230
40
±160
±30
40
633.1
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
27 mJ Note *3
20
5
270
2.02
+150
-55 to +150
kV/µs VDS=< 230V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Drain(D)
Gate(G)
Source(S)
Note *1:Tch<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=16A,L=4.09mH,
VCC=48V,RG=50
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF<= -ID, -di/dt=50A/µs,VCC<= BVDSS,Tch<=150°C
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA
ID= 250µA
VGS=0V
VDS=VGS
VDS=230V VGS=0V
VDS=184V VGS=0V
VGS=±30V VDS=0V
ID=20A VGS=10V
ID=20A VDS=25V
VDS=75V
VGS=0V
f=1MH
VCC=180V ID=20A
VGS=10V
RGS=10
Tch=25°C
Tch=125°C
VCC=115V
ID=40A
VGS=10V
IF=40A VGS=0V Tch=25°C
IF=40A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
230
3.0
12
Typ.
58
24
1880
230
12
28
8.4
56
6
42.0
18.0
12.0
1.10
230
2.5
Max. Units
V
5.0 V
25 µA
250
100 nA
76 m
S
2820
pF
345
18
42 ns
12.6
84
9
63.0 nC
27.0
18.0
1.50 V
ns
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
62 °C/W
www.fujielectric.co.jp/fdt/scd
1




2SK3870-01 pdf, 반도체, 판매, 대치품
2SK3870-01
Safe operating area
102 ID=f(VDS):Single Pulse,Tc=25°C
t=
1µs
101 D.C.
10µs
100µs
1ms
100
10ms
10-1
100
101 102
VDS [V]
100ms
103
Maximum Avalanche Current Pulsewidth
I =f(t ):starting
102 AV
AV
Tch=25°C,Vcc=48V
Single Pulse
101
100
10-1
10-2
10-8
10-7
10-6
10-5
10-4
10-3
t [sec]
AV
Maximum Transient Thermal Impedance
101 Zth(ch-c)=f(t):D=0
10-2
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
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2SK3870-01

N-CHANNEL SILICON POWER MOSFET

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