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부품번호 | S-LMBT3904LT3G 기능 |
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기능 | General Purpose Transistor | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
• We declare that the material of product compliance with RoHS
requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
ORDERING INFORMATION
Device
Marking
Shipping
LMBT3904LT1G
S-LMBT3904LT1G
3
1
LMBT3904LT1G
S-LMBT3904LT1G
1AM
3000/Tape & Reel
LMBT3904LT3G
S-LMBT3904LT3G
MAXIMUM RATINGS
1AM
10000/Tape & Reel
Rating
Symbol
Value
Collector–Emitter Voltage
V CEO
40
Collector–Base Voltage
V CBO
60
Emitter–Base Voltage
V EBO
6.0
Collector Current — Continuous I C
200
Unit
Vdc
Vdc
Vdc
mAdc
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
(I C = 1.0 mAdc)
Collector–Base Breakdown Voltage
V (BR)CBO
(I C = 10 µAdc)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc)
V (BR)EBO
Base Cutoff Current
I BL
( V CE= 30 Vdc, V EB = 3.0 Vdc, )
Collector Cutoff Current
I CEX
( V CE = 30Vdc, V EB = 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
40
60
6.0
—
—
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
50 nAdc
Rev.O 1/7
LESHAN RADIO COMPANY, LTD.
500
300
200 IC/IB = 20
IC/IB = 10
t′s = ts - 1/8 tf
IB1 = IB2
100
70
50 IC/IB = 20
30 IC/IB = 10
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
200
LMBT3904LT1G,S-LMBT3904LT1G
500
300 VCC = 40 V
200 IB1 = IB2
IC/IB = 20
100
70
50
30 IC/IB = 10
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
200
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
10 IC = 1.0 mA
8 SOURCE RESISTANCE = 200 W
IC = 0.5 mA
6 SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
14
12 f = 1.0 kHz IC = 1.0 mA
10 IC = 0.5 mA
8
6
4
IC = 50 mA
IC = 100 mA
2 SOURCE RESISTANCE = 500 W
IC = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0
10 20 40 100
2
0
0.1 0.2 0.4
1.0 2.0 4.0
10 20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9.
h PARAMETERS
Figure 10.
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
40
100
50
200
20
100 10
70 5
50
2
30
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
5.0
10
1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
Rev.O 4/7
4페이지 LESHAN RADIO COMPANY, LTD.
LMBT3904LT1G,S-LMBT3904LT1G
A
L
3
BS
12
VG
C
D
H
K
0.037
0.95
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
J K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.O 7/7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
S-LMBT3904LT3G | General Purpose Transistor | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |