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PDF LMBT3906WT3G Data sheet ( Hoja de datos )

Número de pieza LMBT3906WT3G
Descripción General Purpose Transistor
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! LMBT3906WT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURES
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3906WT1G
2A
3000/Tape&Reel
LMBT3906WT3G
2A
10000/Tape&Reel
MAXIMUM RATINGS(Ta = 25)
Parameter
Symbol
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
VCBO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
Limits
–40
–40
–5
–200
Unit
Vdc
Vdc
Vdc
mAdc
LMBT3906WT1G
S-LMBT3906WT1G
3
1
2
SC–70
1
B ASE
3
COLLECT OR
2
EMIT T ER
THERMAL CHARACTERISTICS
Total Device Dissipation,
PD 150 mW
(Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient
Junction and Storage temperature
RΘJA
833 /W
TJ,Tstg −55+150
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
ELECTRICAL CHARACTERISTICS (Ta= 25)
OFF CHARACTERISTICS
Characteristic
Symbol
Collector–Emitter Breakdown Voltage(Note 2) VBR(CEO)
(IC = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
VBR(CBO)
(I C = –10 μAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 μAdc, I C = 0)
VBR(EBO)
Collector Cutoff Current
ICEX
( V CE = –30 Vdc, V EB =– 3.0Vdc)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0Vdc)
IBL
2.Pulse Test: Pulse Width300 μs; Duty Cycle2.0%.
Min.
–40
–40
–5
Typ.
Max.
–50
–50
Unit
V
V
V
nA
nA
June,2015
Rev.A 1/6

1 page




LMBT3906WT3G pdf
LESHAN RADIO COMPANY, LTD.
LMBT3906WT1G,S-LMBT3906WT1G
< 1 ns
10 k
+10.6 V
300 ns
DUTY CYCLE = 2%
3V
275
+ 9.1 V
< 1 ns
CS < 4 pF*
0
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
10.9 V
* Total shunt capacitance of test jig and connectors
10 k
1N916
3V
275
CS < 4 pF*
Figure 8. Delay and Rise Time Equivalent Test
Figure 9. Storage and Fall Time Equivalent Test
June,2015
Rev.A 5/6

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