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부품번호 | LMBT4403WT3G 기능 |
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기능 | General Purpose Transistor | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LMBT4403WT1G
S-LMBT4403WT1G
LMBT4403WT3G
S-LMBT4403WT3G
Marking
Shipping
2T 3000/Tape & Reel
2T 10000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V CEO
V CBO
V EBO
IC
Value
– 40
– 40
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
Unit
mW
RqJA
833 °C/W
TJ, Tstg −55 to +150 °C
LMBT4403WT1G
S-LMBT4403WT1G
3
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT4403WT1G = 2T
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –0.1mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –0.1mAdc, I C = 0)
Base Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
Collector Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BEV
I CEX
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Min
– 40
– 40
– 5.0
—
—
Max Unit
—
—
—
– 0.1
– 0.1
Vdc
Vdc
Vdc
µAdc
µAdc
Rev.A 1/6
LESHAN RADIO COMPANY, LTD.
LMBT4403WT1G ;S-LMBT4403W T1G
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = –10 Vdc, T A = 25°C
Bandwidth = 1.0 Hz
10 10
f = 1.0 kHz
88
6 I C = 1.0 mA, R S = 430Ω
I C = 500 µA, R S = 560Ω
I = 50
C
µA, R S = 2.7kΩ
4 I C = 100 µA, R S = 1.6 kΩ
6 I C = 50 µA
100 µA
500 µA
4 1.0 mA
2
RS = OPTIMUM SOURCE RESISTANCE
2
0
0.010.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20
f , FREQUENCY (kHz)
Figure 8. Frequency Effects
50 100
0
50 100 200
500 1k 2k
5k 10k 20k
50k
R S, SOURCE RESISTANCE (Ω)
Figure 9. Source Resistance Effects
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
a high–gain and a low–gain unit were selected from the LMBT4403WT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
1000
700
500
300
200
100
70
50
LMBT4403WT1 UNIT 1
LMBT4403WT1 UNIT 2
100
50
20
10
5
2
1
0.5
0.2
LMBT4403WT1 UNIT 1
LMBT4403WT1 UNIT 2
30
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 7.0 5.0 10
I C , COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I C , COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
7.0 5.0
10
20 500
10 LMBT4403WT1 UNIT 1
LMBT4403WT1 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 7.0 5.0 10
I C , COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
100
50
20
10
5.0
2.0
1.0
0.1
LMBT4403WT1 UNIT 1
LMBT4403WT1 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0 7.0 5.0 10
I C , COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
Rev.A 4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
LMBT4403WT3G | General Purpose Transistor | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |