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부품번호 | LMBT3906LT3G 기능 |
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기능 | General Purpose Transistor | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3906LT1G
S-LMBT3906LT1G
ORDERING INFORMATION
Device
Marking
LMBT3906LT1G
S-LMBT3906LT1G
LMBT3906LT3G
S-LMBT3906LT3G
2A
2A
2A
2A
Shipping
3000/Tape & Reel
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V CEO
V CBO
V EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
R θJA
T J , T stg
DEVICE MARKING
LMBT3906LT1G = 2A
Value
– 40
– 40
– 5.0
– 200
Unit
Vdc
Vdc
Vdc
mAdc
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
3
1
2
SOT– 23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
Collector Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
I CEX
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Width <300 µs; Duty Cycle <2.0%.
Min
– 40
– 40
– 5.0
—
—
Max Unit
Vdc
—
Vdc
—
Vdc
—
nAdc
– 50
nAdc
– 50
Rev.O 1/7
LESHAN RADIO COMPANY, LTD.
LMBT3906LT1G ;S-LMBT3906LT1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
1.0 SOURCE RESISTANCE = 2.0 k
IC = 100 mA
12
f = 1.0 kHz
10
8
6
4
2
IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0 10 20 40
f, FREQUENCY (kHz)
Figure 7.
100
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 8.
40
100
300
200
100
70
50
30
0.1
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
70
50
30
20
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 9. Current Gain
5.0 7.0 10
10
7
5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 10. Output Admittance
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
Rev.O 4/7
4페이지 LESHAN RADIO COMPANY, LTD.
LMBT3906LT1G ;S-LMBT3906LT1G
A
L
3
BS
12
VG
C
D
H
K
SOT-23
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
Rev.O 7/7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
LMBT3906LT3G | General Purpose Transistor | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |