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부품번호 | LMBT2369LT3G 기능 |
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기능 | Switching Transistors | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
Switching Transistors
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
Shipping
LMBT2369LT1G
LMBT2369ALT1G
LMBT2369LT3G
LMBT2369ALT3G
S-LMBT2369LT1G
S-LMBT2369ALT1G
S-LMBT2369LT3G
S-LMBT2369ALT3G
M1J
1JA
M1J
1JA
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Emitter Voltage
V CEO
V CES
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
15
40
40
4.5
200
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
LMBT2369LT1G
LMBT2369ALT1G
S-LMBT2369LT1G
S-LMBT2369ALT1G
3
1
2
SOT-23/TO-236AB
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT2369LT1G= M1J, LMBT2369A LT1G = 1JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 10 mAdc, I B = 0)
V (BR)CEO
Collector–Emitter Breakdown Voltage
(I C = 10 µAdc, V BE = 0)
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
V (BR)CES
V (BR)CBO
V (BR)EBO
Collector Cutoff Current( V CB = 20Vdc, I E = 0)
( V CB = 20Vdc, I E = 0, T A=150 °C)
Collector Cutoff Current
( V CE = 20Vdc, V BE = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
LMBT2369A
I CBO
I CES
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
15
40
40
4.5
—
—
—
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— — Vdc
— 0.4 µAdc
— 30
— 0.4 µAdc
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBT2369LT1G LMBT2369ALT1G
S-LMBT2369LT1G S-LMBT2369ALT1G
500
V CC = 10 V
25°C
200 100°C
100
Q T,β F =10
Q T,β F=40
50
Q A ,V CC=10V
20 Q A,V CC =3 V
10
1
2
5 10 20
50 100
I C , COLLECTOR CURRENT (mA)
Figure 8. Maximum Charge Data
+5 V
t1
∆V
0
< 1 ns
3 V 270
10 pF MAX
4.3 k
PULSE WIDTH (t 1 ) = 5 ms
DUTY CYCLE = 2%
VALUES REFER TO
I C = 10 mA TEST
C s * < 4 pF
Figure 9. Q T Test Circuit
C C OPT
C < C OPT
TIME
C=0
Figure 10. Turn–Off Waveform
+6 V
0
t1
–4 V
< 1 ns
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
980
10 V
500
C s * < 3 pF
Figure 11. Storage Time Equivalent Test Circuit
1.0
0.8
0.6
0.4
0.2
0.02
I C=3mA
IC=10 mA
IC=30mA
I C=50mA
I C=100mA
TJ= 25°C
0.05
0.1
0.2
0.5 1
2
5 10
I B , BASE CURRENT (mA)
Figure 12. Maximum Collector Saturation Voltage Characteristics
20
Rev.O 4/6
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부품번호 | 상세설명 및 기능 | 제조사 |
LMBT2369LT3G | Switching Transistors | Leshan Radio Company |
LMBT2369LT3G | Switching Transistors | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |