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부품번호 | BC859C 기능 |
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기능 | General Purpose Transistor PNP Silicon | ||
제조업체 | WEITRON | ||
로고 | |||
전체 4 페이지수
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
General Purpose Transistor
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
3
1
2
SOT-23
MARKING DIAGRAM
3
XX = Device
Code (See
1 2 Table Below)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
Collector-Base Voltage
BC856
BC857
BC858,BC859
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-65
-45
-30
-80
-50
-30
-5.0
-100
Unit
V
V
V
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Symbol
PD
R θJA
PD
R θJA
Max
225
1.8
556
300
2.4
417
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
Junction and Storage, Temperature
TJ,Tstg
-55 to +150
C
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC= -10mA)
BC856 Series
BC857 Series
V(BR)CEO
-65
-45
-
-
-V
-
BC858, BC859 Series
-30 - -
Collector-Emitter Breakdown Voltage
(IC=-10 µA ,VEB=0)
BC856 Series
BC857 Series
V(BR)CES
-80
-50
-
-
-V
-
BC858, BC859 Series
-30 - -
Collector-Base Breakdown Voltage
(IC=-10 µA)
BC856 Series
BC857 Series
V(BR)CBO
-80
-50
-
-
-V
-
BC858, BC859 Series
-30 - -
Emitter-Base Breakdown Voltage
(IE=-1.0 µA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)EBO
-5.0
-5.0
-5.0
- -V
--
--
Collector Cutoff Current (VCB=-30V)
(VCB=-30V, TA=150 C)
ICBO
-
-
- -15 nA
- -4.0 mA
WEITRON
http://www.weitron.com.tw
1/4 Rev A 12-Apr-05
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE ITR ON
BC856 Series
VCE= -5.0V
TA= 25 C
2.0
1.0
0.5
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
-1.0
TJ=25 C
-0.8
VBE(sat)@IC/IB=10
-0.6
VBE@VCE=-5.0V
-0.4
-0.2
VCE(sat)@IC/IB=10
0
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT(mA)
Figure 8. "ON" Voltage
-2.0
-1.6
IC=
-10mA
-1.2
-20mA
-50mA
-100mA -200mA
-0.8
-0.4
TJ=25 C
0
-0.02 -0.05 -0.1
-0.2 -0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
Figure 9. Collector Saturation Region
-20
-1.0
-1.4
-1.8 qVB for VBE
-2.2
-55 C to 125 C
-2.6
-3.3
-0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 10. Base-Emitter Temperature Coefficient
40
TJ=25 C
20 Cib
10
8.0
6.0 Cob
4.0
2.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
-50 -100
VCE=-5.0V
500
200
100
50
20
-1.0 -10 -100
IC, COLLECTOR CURRENT (mA)
Figure 12.Current-Gain-Bandwidth Product
WEITRON
http://www.weitron.com.tw
4/4 Rev A 12-Apr-05
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
BC859 | Silicon PNP transistor | BLUE ROCKET ELECTRONICS |
BC859 | PNP Transistors | Kexin |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |