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FSYC9055D3 데이터시트 PDF




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부품번호 FSYC9055D3 기능
기능 Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
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FSYC9055D3 데이터시트, 핀배열, 회로
FSYC9055D, FSYC9055R
July 1999
Features
POSSFOSIBTBLYSECOS9L0UE5BT5SEDT,PIFTRSUOTTDYEUCPC9R0TO55DRUCT
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
Description
[ /Title
(FSYC
9055D,
FSYC
9055R)
/Sub-
ject
(Radia-
tion
Hard-
ened,
SEGR
Resis-
tant
P-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Radia-
tion
Hard-
ened,
SEGR
Resis-
tant P-
Chan-
nel
Power
MOS-
FETs)
/Cre-
ator ()
/DOCI
• 59A, -60V, rDS(ON) = 0.027
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14Neutrons/cm2g
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSYC9055D1
10K TXV
FSYC9055D3
100K
Commercial
FSYC9055R1
100K
TXV
FSYC9055R3
100K
Space
FSYC9055R4
The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numer-
ous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.
Symbol
D
Formerly available as type TA17750.
G
S
Package
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1999
1
File Number 4525.1




FSYC9055D3 pdf, 반도체, 판매, 대치품
FSYC9055D, FSYC9055R
Typical Performance Curves Unless Otherwise Specified (Continued)
70 500
60
50 100
TC = 25oC
100µs
40 1ms
30
20
10
0
-50 0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
10
1
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
-10 -100 -200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, VGS = 12V, ID = 38A
2.0
-12V
QGS
VG
QG
QGD
CHARGE
FIGURE 5. BASIC CHARGE WAVEFORM
10
1.5
1.0
0.5
0.0
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
10-5
PDM
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
100
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
101
4

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FSYC9055D3 전자부품, 판매, 대치품
FSYC9055D, FSYC9055R
Rad Hard Data Packages - Harris Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
F. Group A
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
7

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