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C30659-1550E-R2AH 데이터시트 PDF




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부품번호 C30659-1550E-R2AH 기능
기능 Si and InGaAs APD Preamplifier Modules
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C30659-1550E-R2AH 데이터시트, 핀배열, 회로
DATASHEET
Photon Detection
C30659 Series 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Excelitas’ C30659-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold
and greater resilience when exposed to higher optical power densities.
Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode
(APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to
allow for ultra-low noise operation.
The Si APDs used in these devices are the same as used in Excelitas’ C30817EH,
C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in
the C30645EH and C30662EH products. These detectors provide very good response
between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The
preamplifier section of the module uses a very low noise GaAs FET front end
designed to operate at higher transimpedance than Excelitas’ regular C30950 Series.
The C30659 is pin-to-pin compatible with the C30950 Series with a negative output.
An emitter follower is used as an output buffer stage. To obtain the wideband
characteristics, the output of these devices should be capacitively- or AC-coupled to
a 50 termination. The module must not be DC-coupled to loads of less than 2,000
Ohms. For field use, it is recommended that a temperature-compensated HV supply
be employed to maintain a constant responsivity over temperature.
Excelitas’ InGaAs C30659-1550E Preamplifier Modules, with 1550 nm peak
response, are designed to exhibit higher damage thresholds, thus providing
greater resilience when exposed to high optical power densities.
Customization of the C30659 Series of APD Preamplifier Modules is available
to meet your specific design challenges; modifications include bandwidth and gain
optimization, use of different APDs, FC-connectorized packaging.
www.excelitas.com
C30659 Series-Rev.1.1-2013.06 Page 1 of 10
Key Features
System bandwidths of 50 MHz
and 200MHz
Ultra low noise equivalent
power (NEP)
Spectral response range:
With Si APD: 400 to 1100 nm
With InGaAs APD: 1100 to
1700 nm
Typical power consumption: 150 mW
±5 V amplifier operating voltages
50 Ω AC load capability (AC-Coupled)
Hermetically-sealed TO-8 package
High reliability
Fast overload recovery
Pin-to-pin compatible with the
C30950 Series
Light entry angle, over 130°
Model 1550E exhibits enhanced
damage threshold
RoHS-compliant
Applications
Range finding
LIDAR
Confocal microscopy




C30659-1550E-R2AH pdf, 반도체, 판매, 대치품
C30659 Series 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Table 3. Performance Specifications − C30659-1550/1550E Models (1550 nm peak response InGaAs APD)
Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled
Detector type
C30659-1550-R2AH
C30659-1550E-R2AH
(C30662EH APD)
C30659-1550-R08BH
C30659-1550E-R08BH
(C30645EH APD)
Parameter
Min Typical Max Min Typical Max
Units
Active diameter
0.2 0.08 mm
Active area
0.03
0.005
mm²
Nominal field of view α (see Figure 8)
145 145 Degrees
Nominal field of view α’ (see Figure 8)
146 146 Degrees
System bandwidth, f-3dB
Bandwidth range
40 50
50
175 200
200
MHz
MHz
Temperature coefficient of Vop for constant gain
0.2
0.2 V/˚C
Vop for specified responsivity
40 Note 1 70
40 Note 1 70
V
Temperature sensor sensitivity (Note 2)
-1.8 -2.1 -2.4 -1.8 -2.1 -2.4
mV/˚C
Responsivity
at 1300 nm
at 1550 nm
Rf (Internal feedback resistor)
Noise equivalent power (NEP) (Note 3)
Average from 100 kHz to f-3dB, ∆f = 1.0 Hz
at 1300 nm
at 1550 nm
Output spectral noise voltage
Averaged from 100 kHz to f-3dB
300
340
68
150 180
130 160
45 55
80 kV/W
90 kV/W
18 kΩ
250 375
220 330
20 30
fW/Hz
fW/Hz
nV/Hz
Output impedance
33 40 50 33 40 50
Rise time, tr (= 1300 and 1550 nm)
10% to 90% points
Fall time, tf (= 1300 and 1550 nm)
90% to 10% points
Recovery time after overload (Note 4)
7
7
150
2
2
150
ns
ns
ns
Output voltage swing (1 kΩ load) (Note 5)
23
23
V
Output voltage swing (50 Ω load) (Note 5)
DC output offset voltage
0.7 0.9
0.7 0.9
-1 0.25 1 -1 0.25
1
V
V
Positive supply current (V+)
20 35
20 35
Negative supply current (V-)
10 20
10 20
Notes:
1.
2.
3.
4.
5.
A specific value of Vop is supplied with each device. The Vop value will be within the specified range.
If = 0.1 mA at 25˚C.
NEP is calculated as the output spectral noise voltage divided by the typical responsivity.
0 dBm with 250 ns pulses.
Pulsed operation.
mA
mA
www.excelitas.com
Page 4 of 10
C30659 Series-Rev.1.1-2013.06

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C30659-1550E-R2AH 전자부품, 판매, 대치품
C30659 Series 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Figure 4. Typical Responsivity as a function of Operating Voltage C30659-(1550/1550E) Series
10000
C30659-1550/1550E-R2AH
C30659-1550/1550E-R08BH
1000
100
10
10 15 20 25 30 35 40 45 50 55
Operating Voltage [V]
Figure 5. Typical Noise and Frequency response curves
1.4 1
1.2 0
-1
1
-2
0.8 -3
0.6
0.4
50 MHz
0.2 200 MHz
-4
-5
-6
-7
0 -8
1
10
100
1000
1
Frequency [MHz]
50 MHz
200 MHz
10 100
Frequency [MHz]
60
1000
Output voltage noise normalization is calculated using the following formula:
V V V V  VHz  nnormalize
n , where
n a vera g e
na vera g e
f 3 d B
Vn2 df
100kHz
f3dB
www.excelitas.com
Page 7 of 10
C30659 Series-Rev.1.1-2013.06

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C30659-1550E-R2AH

Si and InGaAs APD Preamplifier Modules

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