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LMBT2907ADW1T1G 데이터시트 PDF




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부품번호 LMBT2907ADW1T1G 기능
기능 Dual General Purpose Transistor
제조업체 Leshan Radio Company
로고 Leshan Radio Company 로고


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LMBT2907ADW1T1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistor
Featrues
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Value
Symbol 2907 2907A Unit
Collector–Emitter Voltage
V CEO
–40 –60 Vdc
Collector–Base Voltage
V CBO
–60 Vdc
Emitter–Base Voltage
V EBO
–5.0 Vdc
Collector Current — Continuous I C
–600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
LMBT2907DW1T1G
LMBT2907ADW1T1G
S-LMBT2907DW1T1G
S-LMBT2907ADW1T1G
65 4
1
2
3
SC-88
(3) (2)
(1)
Q1
Q2
(4) (5)
(6)
ORDERING INFORMATION
Device
Packing
LMBT2907ADW1T1G
S-LMBT2907ADW1T1G
SC88
LMBT2907ADW1T 3G
S-LMBT2907ADW1T1G
SC88
Shipping
3000 Units/Reel
10000 Units/Reel
(S-)LMBT2907DW1T1G = M2B, (S-)LMBT2907ADW1T1G = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = –10 mAdc, I B = 0)
LMBT2907
LMBT2907A
Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0)
Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc)
Collector Cutoff Current
( V CB = –50Vdc, I E = 0)
LMBT2907
LMBT2907A
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CEX
I CBO
–40
–60
–60
–5.0
–50
–0.020
–0.010
Vdc
Vdc
Vdc
nAdc
µAdc
( V CB = –50Vdc, I E = 0, T A =125°C )
LMBT2907
LMBT2907A
Base Current( V CE = –30Vdc, V =EB(off) –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
— –20
— –10
I B — –50 nAdc
Rev.A 1/6




LMBT2907ADW1T1G pdf, 반도체, 판매, 대치품
LESHAN RADIO COMPANY, LTD.
LMBT2907DW1T1G, LMBT2907ADW1T1G
S-LMBT2907DW1T1G, S-LMBT2907ADW1T1G
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = 10 Vdc, T A = 2C
10 10
f = 1.0 kHz
8.0 8.0
6.0 IC = -1.0 mA, Rs = 430 W
-500 mA, Rs = 560 W
-50 mA, Rs = 2.7 kW
4.0 -100 mA, Rs = 1.6 kW
6.0
4.0
2.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
IC = -50 mA
-100 mA
-500 mA
-1.0 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
50 k
30
20 Ceb
400
300
200
10
7.0
5.0 Ccb
3.0
2.0
-0.1
-0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
-20 -30
1
IC/IB = 10
25°C
150°C
55°C
0.1
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
100
80 VCE = -20 V
60 TJ = 25°C
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
IC, COLLECTOR CURRENT (mA)
Figure 10. CurrentGain Bandwidth Product
1.1
1.0 IC/IB = 10
0.9 55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
Rev.A 4/6

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부품번호상세설명 및 기능제조사
LMBT2907ADW1T1G

Dual General Purpose Transistor

Leshan Radio Company
Leshan Radio Company

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