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부품번호 | LMBT3904DW1T1G 기능 |
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기능 | Dual General Purpose Transistor | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
전체 6 페이지수
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
The LMBT3904DW1T1G device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices
in one package , this device is ideal for low–power surface mount
applications where board space is at a premium.
LMBT3904DW1T1G
S-LMBT3904DW1T1G
●FEATURES
1)Low VCE(sat), ≤ 0.4 V
2)Simplifies Circuit Design
3)Reduces Board Space
4)Reduces Component Count
5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
6)hFE, 100–300
7)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
8) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SC-88
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3904DW1T1G
MA
3000/Tape&Reel
LMBT3946DW1T3G
MA
10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
●THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient(Note 1)
Junction and Storage temperature
PD 150
RΘJA
TJ,Tstg
833
−55∼+150
mW
℃/W
℃
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
June,2015
Rev.B 1/6
10
1
0
1000
100
10
1
0.1
LESHAN RADIO COMPANY, LTD.
LMBT3904DW1T1G,S-LMBT3904DW1T1G
ELRCTRICAL CHARACTERISTICS CURVES
1 10
VR, Reverse Voltage (V)
180
160
140
120
100
80
60
40
20
0
0.1
1
IC, Collector Current (mA)
Cobo[pF]
Cibo[pF]
FIG.3 Capacitance
FIG.4 Current Gain
10
VCE=1V
1 10
IC, Collector Current (A)
100
25℃ FIG1350℃
-55℃
FIG.5 DC Current Gain
1
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
IB, Base Current (mA)
10
IC=1FmAIG4 IC=10mA
IC=30mA
IC=100mA
FIG.6 Collector Saturation Region
June,2015
Rev.B 4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ LMBT3904DW1T1G.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LMBT3904DW1T1 | Dual Transistors | Leshan Radio Company |
LMBT3904DW1T1G | Dual General Purpose Transistor | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |