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PDF LMBT3946DW1T3G Data sheet ( Hoja de datos )
| Número de pieza | LMBT3946DW1T3G | |
| Descripción | Dual General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
The LMBT3904DW1T1G device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices
in one package , this device is ideal for low–power surface mount
applications where board space is at a premium.
LMBT3904DW1T1G
S-LMBT3904DW1T1G
●FEATURES
1)Low VCE(sat), ≤ 0.4 V
2)Simplifies Circuit Design
3)Reduces Board Space
4)Reduces Component Count
5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
6)hFE, 100–300
7)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
8) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SC-88
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3904DW1T1G
MA
3000/Tape&Reel
LMBT3946DW1T3G
MA
10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
●THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient(Note 1)
Junction and Storage temperature
PD 150
RΘJA
TJ,Tstg
833
−55∼+150
mW
℃/W
℃
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
June,2015
Rev.B 1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LMBT3904DW1T1G，S-LMBT3904DW1T1G
ELRCTRICAL CHARACTERISTICS CURVES
2.5
IC/IB=10
2
1.5
1
0.5
0
0.001
0.01
0.1
IC, Collector Current(A)
1.4
1.2 IC/IB=10
1
0.8
0.6
0.4
0.2
0
1
0.0001
0.001
0.01
0.1
IC, Collector Current(A)
25℃
150℃
-55℃
25℃
150℃
-55℃
1
FIG.7 VCE(sat) vs. IC
FIG.8 VBE(sat) vs. IC
1.4
1.2 VCE=1V
1
0.8
0.6
0.4
0.2
0
0.0001
0.001
0.01
0.1
IC, Collector Current(A)
25℃
150℃
-55℃
FIG.9 VBE(on) vs. IC
1
June,2015
Rev.B 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LMBT3946DW1T3G.PDF ] | |
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