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부품번호 | LMBT3906DW1T1G 기능 |
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기능 | Dual Bias Resistor Transistors PNP Silicon | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
전체 6 페이지수
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon
The LMBT3906DW1T1G device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices
in one package , this device is ideal for low–power surface mount
applications where board space is at a premium.
●FEATURES
1)hFE, 100–300
2)Low VCE(sat),≦0.4 V
3)Simplifies Circuit Design
4)Reduces Board Space
5)Reduces Component Count
6)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
7)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LMBT3906DW1T1G
S-LMBT3906DW1T1G
65 4
1
2
3
SOT-363
(3) (2)
(1)
Q1
Q2
(4) (5)
(6)
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3906DW1T1G
A2 3000/Tape&Reel
LMBT3906DW1T3G
A2 10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
VCBO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
Limits
–40
–40
–5
–200
Unit
Vdc
Vdc
Vdc
mAdc
●THERMAL CHARACTERISTICS
Total Device Dissipation,
PD 150 mW
(Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient
RΘJA
833 ℃/W
Junction and Storage
temperature
TJ,Tstg −55∼+150
℃
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
June,2015
Rev.A 1/6
LESHAN RADIO COMPANY, LTD.
LMBT3906DW1T1G,S-LMBT3906DW1T1G
Electrical Characteristics Curves
0.50
0.45 IC/IB=10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.0E-03 1.0E-02
1.0E-01
1.0E+00
IC, Collecotr Current (A)
-55℃
25℃
150℃
1.4
IC/IB=10
1.2
1.0
0.8
0.6
0.4
0.2
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
IC, Collector Current (A)
-55℃
25℃
150℃
Figure 5. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
1.4
VCE=1V
1.2
1.0
0.8
0.6
0.4
0.2
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
IC, Collector Current (A)
-55℃
25℃
150℃
Figure 7. Base Emitter Voltage vs. Collector Current
June,2015
Rev.A 4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ LMBT3906DW1T1G.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LMBT3906DW1T1G | Dual Bias Resistor Transistors PNP Silicon | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |