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PDF LMBT2222ADW1T3G Data sheet ( Hoja de datos )
| Número de pieza | LMBT2222ADW1T3G | |
| Descripción | Dual General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LMBT2222ADW1T3G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Silicon
We declare that material of product compliance
with ROHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
ORDERING INFORMATION
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
Max
150
Unit
mW
RqJA
833 °C/W
TJ, Tstg –55 to +150 °C
Device
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
LMBT2222ADW1T3G
S-LMBT2222ADW1T3G
Marking
XX
XX
Shipping
3000/Tape & Reel
10000/Tape & Reel
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
6
5
4
1
2
3
SC-88
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
Rev.O 1/7
1 page  
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
10 10
RS = OPTIMUM
f = 1.0 kHz
8.0
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
RS = SOURCE
RS = RESISTANCE
8.0
IC = 50 mA
100 mA, RS = 2.0 kW
100 mA
6.0 50 mA, RS = 4.0 kW
6.0 500 mA
1.0 mA
4.0 4.0
2.0 2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
Figure 5. Frequency Effects
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 6. Source Resistance Effects
30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
10 200
7.0
5.0 100
Ccb
3.0 70
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30 50
Figure 7. Capacitances
1
IC/IB = 10
150°C
0.1
−55°C
25°C
0.01
0.001
0.01 0.1
IC, COLLECTOR CURRENT (A)
1
50
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Current–Gain Bandwidth Product
1.3
1.2 IC/IB = 10
1.1
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
1
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Rev.O 5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet LMBT2222ADW1T3G.PDF ] | |
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