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LBSS138WT1G 데이터시트 PDF




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부품번호 LBSS138WT1G 기능
기능 Power MOSFET ( Transistor )
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LBSS138WT1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SC-70
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
Miniature SC–70 Surface Mount Package saves board space
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Rθ JA
TL
Value
50
± 20
200
800
150
– 55 to
150
556
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
LBSS138WT1G
S-LBSS138WT1G
3
1
2
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
Drain
3
1
Gate
2 Source
Marking Diagram
J1
J1 = Device Code
M = Month Code
ORDERING INFORMATION
Device
Marking
Shipping
LBSS138WT1G
S-LBSS138WT1G
LBSS138WT3G
S-LBSS138WT3G
J1
J1
3000 Tape & Reel
10000 Tape & Reel
Rev .O 1/5




LBSS138WT1G pdf, 반도체, 판매, 대치품
LESHAN RADIO COMPANY, LTD.
LBSS138WT1G , S-LBSS138WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
10
9 VGS = 2.5 V
8
150°C
7
6
5 25°C
4
3 -55°C
2
1
0 0.05 0.1 0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
6
5.5 VGS = 4.5 V
5
4.5
4
3.5
3
2.5
2
1.5
1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
ID, DRAIN CURRENT (AMPS)
150°C
25°C
-55°C
0.4 0.45
0.5
Figure 8. On–Resistance versus Drain Current
8
VGS = 2.75 V
7
6
150°C
5
4
25°C
3
2 -55°C
1
0
0.05 0.1
0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS)
Figure 7. On–Resistance versus Drain Current
4.5
VGS = 10 V
4
150°C
3.5
3
2.5 25°C
2
1.5 -55°C
1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
ID, DRAIN CURRENT (AMPS)
Figure 9. On–Resistance versus Drain Current
1
0.1
TJ = 150°C 25°C
-55°C
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
1.2
120
100
80
60
Ciss
40
Coss
20
Crss
00
5
10 15 20
Figure 11. Capacitance
25
Rev .O 4/5

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LBSS138WT1G 전자부품, 판매, 대치품
LESHAN RADIO COMPANY, LTD.
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
K
t
Top Cover
Tape
B1 K0
See
Note 1
10 Pitches Cumulative Tolerance on
P
0
Tape ± 0.2mm( ± 0.008’’ )
D P2
E
A
0
FW
B0
P
Embossment
Center Lines
of Cavity
D1
For Components
2.0mm x 1.2mm and Larger
For Machine Reference Only
Including Draft and RADII
Concentric Around B
0
User Direction of Feed
R Min
Bar Code Label
Tape and Components
Shall Pass Around
Radius “R”
Bending Radius Without Damage
10 o
Maximum Component Rotation
Embossed Carrier
100 mm
(3.937 ’’)
1 mm Max
Typical Component
Cavity Center Line
*Top Cover Tape
Thickness(t )
1
0.10mm
(0.004’’ )Max.
Embossment
Tape
Typical Component
Center Line
1 mm(.039’’ ) Max
250 mm
(9.843’’)
Camber (Top View)
Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
DIMENSIONS
Tape
Size B1 Max
D
4.55mm 1.5+0.1mm
8mm (.179’’) - 0.0
8.2mm (.059+.004’’
12mm (.323’’) - 0.0)
12.1mm
16mm (.476’’)
20.1mm
24mm (.791’’)
D1
1.0Min
(.039’’)
1.5mmMin
(.060’’)
E
1.75 ± 0.1mm
(.069±.004)
F
3.5 ± 0.05mm
(.138±.002’’)
5.5 ± 0.05mm
(.217±.002’’)
7.5 ± 0.10mm
(.295±.004’’)
11.5 ± 0.1mm
(.453±.004’’)
K P0
P2
2.4mmMax 4.0 ± 0.1mm
(.094’’) (.157±.004’’)
6.4mmMax
(.252’’)
7.9mmMax
(.311’’)
11.9mmMax
(.468’’)
2.0 ± 0.1mm
(.079±.002’’)
RMin TMax WMax
25mm 0.6mm
(.98’’) (.024’’)
30mm
(1.18’’)
8.3mm
(.327’’)
12 ± .30mm
(.470±.012’’)
16.3mm
(.642’’)
24.3mm
(.957’’)
Metric dimensions govern - English are in parentheses for reference only.
NOTE 1: A 0 , B 0 , and K 0 are determined by component size. The clearance between the components and the cavity must be within
.05 mm min. to.50 mm max.,
NOTE 2: the component cannot rotate more than 10 o within the determined cavity.
NOTE 3: If B1 exceeds 4.2 mm (.165”) for 8 mm embossed tape, the tape may not feed through all tape feeders.

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부품번호상세설명 및 기능제조사
LBSS138WT1G

Power MOSFET ( Transistor )

Leshan Radio Company
Leshan Radio Company

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