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AUIRFSL8408 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 AUIRFSL8408
기능 Power MOSFET
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AUIRFSL8408 데이터시트, 핀배열, 회로
AUTOMOTIVE GRADE
AUIRFS8408
AUIRFSL8408
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other
applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l SMPS
G
D
S
G
Gate
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.3mΩ
1.6mΩ
c317A
195A
DD
S
G
D2Pak
AUIRFS8408
S
D
G
TO-262
AUIRFSL8408
D
Drain
S
Source
Ordering Information
Base part number Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFSL8408
TO-262
Tube
50
AUIRFSL8408
AUIRFS8408
D2Pak
Tube
50
AUIRFS8408
Tape and Reel Left
800
AUIRFS8408TRL
Tape and Reel Right
800
AUIRFS8408TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
™Max.
317
™224
195
l1270
Units
A
PD @TC = 25°C Maximum Power Dissipation
294 W
Linear Derating Factor
1.96
W/°C
VGS Gate-to-Source Voltage
± 20
V
TJ Operating Junction and
-55 to + 175
TST G
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
eEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (tested)
IAR
EAR
ÃeSingle Pulse Avalanche Energy Tested Value
dAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
kParameter
Junction-to-Case
jJunction-to-Ambient (PCB Mount)
490
800
See Fig. 14, 15, 24a, 24b
Typ.
–––
–––
Max.
0.51
40
mJ
A
mJ
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 25, 2013




AUIRFSL8408 pdf, 반도체, 판매, 대치품
1000
100 TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
350
300 Limited By Package
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4 www.irf.com © 2013 International Rectifier
AUIRFS/SL8408
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Limited By Package
100μsec
1msec
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
50
49 Id = 5.0mA
48
47
46
45
44
43
42
41
40
-60 -20 20 60 100 140 180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
2500
2000
1500
ID
TOP 25A
52A
BOTTOM 100A
1000
500
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 25, 2013

4페이지










AUIRFSL8408 전자부품, 판매, 대치품
AUIRFS/SL8408
20.0
15.0
VGS = 5.5V
VGS = 6.0V
10.0
5.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0.0
0
100 200 300 400
ID, Drain Current (A)
500
Fig 22. Typical On-Resistance vs. Drain Current
7 www.irf.com © 2013 International Rectifier
April 25, 2013

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