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FDP085N10A 데이터시트 PDF




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부품번호 FDP085N10A 기능
기능 N-Channel PowerTrench MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FDP085N10A 데이터시트, 핀배열, 회로
FDP085N10A
N-Channel PowerTrench® MOSFET
100 V, 96 A, 8.5 mΩ
November 2013
Features
• RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP085N10A_F102
100
±20
96
68
384
269
6.0
188
1.25
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP085N10A_F102
0.8
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
1
www.fairchildsemi.com




FDP085N10A pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.12
1.08
1.04
1.00
0.96
0.92
-80
*Notes:
1. VGS = 0V
2. ID = 250μA
-40 0 40 80 120 160 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
1000
100
10μs
100μs
10
Operation in This Area
1ms
is Limited by R DS(on)
1 *Notes:
1. TC = 25oC
10ms
DC
2. TJ = 175oC
3. Single Pulse
0.1
1
10
100
VDS, Drain-Source Voltage [V]
200
Figure 11. Eoss vs. Drain to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0 0
20 40 60 80
VDS, Drain to Source Voltage [V]
100
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
-80
*Notes:
1. VGS = 10V
2. ID = 96A
-40 0 40 80 120 160 200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
80
VGS= 10V
60
40
20
RθJC = 0.8oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
Figure 12. Unclamped Inductive
Switching Capability
30
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.01
0.1 1 10 100 300
tAV, TIME IN AVALANCHE (ms)
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
4
www.fairchildsemi.com

4페이지










FDP085N10A 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
7
www.fairchildsemi.com

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관련 데이터시트

부품번호상세설명 및 기능제조사
FDP085N10A

N-Channel PowerTrench MOSFET

micross
micross
FDP085N10A

N-Channel PowerTrench MOSFET

Fairchild Semiconductor
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