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Datasheet LP7618B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | LP7618B | 6 sound alarm 6 key independent or combined cycle IC SHENZHEN LAND-HOP MICRO-ELECTRONICS LTD.
6 声报警器 6 键独立或组合循环 IC
FEATURES 功能叙述
z 自动断电设计，降低系统耗电； z 内建 RC 振荡线路，无需外加石英振荡器； z 可设定声音出现之优先顺序； z CMOS 设计，静态功耗低，低工作电� |  LAND-HOP MICRO-ELECTRONICS | data |
| 2 | LP7618B | 6 sound alarm 6 key independent or combined cycle IC 森川电子科技有限公司
Shenzhen Silvan Chip Electronics Tech.Co.,Ltd.
LP7618B 6 声报警器6 键独立或组合循环IC
LP7618B功能叙述
● 自动断电设计，降低系统耗电； ● 内建RC 振荡线路，无需外加石英振荡器； ● 可设定声音出现之优先顺序； |  Silvan Chip | data |
LP7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LP701 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
LP701
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o  Polyfet RF Devices transistor | | |
| 2 | LP702 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
LP702
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o Polyfet RF Devices transistor | | |
| 3 | LP7100B | Tone siren circuit 森川电子科技有限公司
Silvan Chip Electronics Tech. Co., Ltd.
LP7100B 单音警号电路
LP7100B 简介：(兼容:RT0100)
LP7100B 是采用 CMOS 制程产生六种不同警报音的电路，六音将循序产生。
LP7100B 特点：(兼容:RT0100)
低工作电压 2~5V; CMOS 工艺； 内� Silvan Chip data | | |
| 4 | LP721 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
LP721
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o Polyfet RF Devices transistor | | |
| 5 | LP721 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
LP721
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o Polyfet RF Devices transistor | | |
| 6 | LP722 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
LP722
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o Polyfet RF Devices transistor | | |
| 7 | LP750 | 0.5 W POWER PHEMT 0.5 W POWER PHEMT • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency
DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD
LP750
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DESCRIPTION AND APPLICATIONS The LP750  Filtronic Compound Semiconductors data | |
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