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HY628400LG PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 HY628400LG
기능 512K x 8bit CMOS SRAM
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HY628400LG 데이터시트, 핀배열, 회로
HY628400 Series
512Kx8bit CMOS SRAM
DESCRIPTION
The HY628400 is a high-speed, low power and
4M bits CMOS SRAM organized as 524,288
words by 8 bits. The HY628400 uses Hyundai's
high performance twin tub CMOS process
technology and was designed for high-speed and
low power circuit technology. It is particulary well
suited for use in high-density and low power
system applications. This device has a data
retention mode that guarantees data to remain
valid at the minimum power supply voltage of
2.0V.
Product
Voltage Speed Operation
No. (V) (ns) Current(mA)
HY628400
5.0 55/70/85
10
Note 1. Normal : Normal Temperature
2. Current value are max.
FEATURES
Fully static operation and Tri-state outputs
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
- 2.0V(min) data retention
Standard pin configuration
- 32pin 525mil SOP
- 32pin 400mil TSOP-II
(Standard and Reversed)
Standby Current(uA)
L LL
100 30
Temperature
(°C)
0~70(Normal)
PIN CONNECTION
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SOP
32 Vcc A18 1
31
30
29
A15
A17
/WE
A16
A14
A12
2
3
4
28 A13
A7 5
27 A8
A6 6
26
25
A9
A11
24 /OE
A5 7
A4 8
A3 9
23
22
21
20
A10
/CS
I/O8
I/O7
A2
A1
A0
I/O1
10
11
12
13
19 I/O6 I/O2 14
18
17
I/O5 I/O3
I/O4 Vss
15
16
32 Vcc Vcc 32
31 A15 A15 31
30 A17 A17 30
29 /WE /WE 29
28 A13 A13 28
27 A8
A8 27
26
25
24
A9
A11
/OE
A9
A11
/OE
26
25
24
23
22
A10
/CS
A10
/CS
23
22
21
20
I/O8 I/O8
I/O7 I/O7
21
20
19 I/O6 I/O6 19
18 I/O5 I/O5 18
17 I/O4 I/O4 17
1
2
3
4
A18
A16
A14
A12
5 A7
6
7
A6
A5
8 A4
9 A3
10 A2
11
12
A1
A0
13 I/O1
14 I/O2
15 I/O3
16 Vss
TSOP-II(Standard)
TSOP-II(Reversed)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A18
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Address Input
Data Input/Output
Power(5.0V)
Ground
BLOCK DIAGRAM
A0 ROW DECODER
A18
/CS
/OE
/WE
MEMORY ARRAY
1024x4096
I/O1
I/O8
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Jan.99
Hyundai Semiconductor




HY628400LG pdf, 반도체, 판매, 대치품
AC TEST CONDITIONS
TA = 0°C to 70°C (Normal) unless otherwise specified
PARAMETER
Value
Input Pulse Level
0.8V to 2.4V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
HY628400 Series
CAPACITANCE
Temp = 25°C, f= 1.0MHz
Symbol
Parameter
CIN Input Capacitance
COUT
Output Capacitance
Condition
VIN = 0V
VI/O = 0V
Max.
6
8
Note : This parameter is sampled and not 100% tested
Unit
pF
pF
Rev.04/Jan99
4

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HY628400LG 전자부품, 판매, 대치품
HY628400 Series
DATA RETENTION ELECTRIC CHARATERISTIC
TA=0°C to 70°C (Normal)
Symbol
Parameter
VDR Vcc for Data Retention
ICCDR
Data Retention
Current
HY628400
tCDR
tR
Chip Deselect to Data Retention Time
Operating Recovery Time
Test Condition
/CS > Vcc - 0.2V
Vss<VIN<Vcc
Vcc = 3.0V,
L
/CS >Vcc - 0.2V LL
Vss<VIN <Vcc
Min Typ Max Unit
2.0 - - V
- - 50 uA
- - 15 uA
0
tRC(2)
-
-
- ns
- ns
Notes:
1. Typical values are at the comdition of TA = 25°C.
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
VCC
4.5V
2.2V
VDR
CS
VSS
tCDR
DATA RETENTION MODE
tR
CS>VCC-0.2V
RELIABILITY SPEC.
TEST MODE
ESD
HBM
MM
LATCH - UP
TEST SPEC.
> 2000V
> 250V
< -100mA
> 100mA
Rev.04/Jan99
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