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IRF1407LPbF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1407LPbF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IRF1407LPbF 기능
기능 Power MOSFETs
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IRF1407LPbF 데이터시트, 핀배열, 회로
PD -95486
IRF1407SPbF
Benefits
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10Vˆ
Continuous Drain Current, VGS @ 10Vˆ
Pulsed Drain Current ˆ
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚ˆ
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒˆ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
G
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
IRF1407LPbF
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0078
ID = 100A†
S
D2Pak
IRF1407S
TO-262
IRF1407L
Max.
100†
70†
520
3.8
200
1.3
± 20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
www.irf.com
1
06/30/04




IRF1407LPbF pdf, 반도체, 판매, 대치품
IRF1407S/LPbF
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
1
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15
ID = 78A
12
VDS = 60V
VDS = 37V
VDS = 15V
9
6
3
0
0 40 80 120 160 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
100.00 TJ = 175°C
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.00
TJ = 25°C
1.00
0.10
0.0
VGS = 0V
1.0 2.0
VSD, Source-toDrain Voltage (V)
3.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
100µsec
10 1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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IRF1407LPbF 전자부품, 판매, 대치품
1000
Duty Cycle = Single Pulse
100 0.01
0.05
10 0.10
IRF1407S/LPbF
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Typical Avalanche Current Vs.Pulsewidth
1.0E-01
400
300
200
100
0
25
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
175
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
www.irf.com
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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