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PDF AUIRL1404ZL Data sheet ( Hoja de datos )
| Número de pieza | AUIRL1404ZL | |
| Descripción | Power MOSFETs | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96331
AUTOMOTIVE GRADE
AUIRL1404Z
AUIRL1404ZS
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
AUIRL1404ZL
HEXFET® Power MOSFET
D V(BR)DSS
40V
l 175°C Operating Temperature
RDS(on) typ. 2.5mΩ
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
G
max. 3.1mΩ
lÃID (Silicon Limited) 180A
l Automotive Qualified *
S ID (Package Limited) 160A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
D
DD
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
DS
G
DS
G
DS
G
TO-220AB
AUIRL1404Z
D2Pak
TO-262
AUIRL1404ZS AUIRL1404ZL
applications.
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient
temperature
(TA)
is
25°C,
unless otherwise
Parameter
specified.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
l180
130
160
790
200
Units
A
W
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
1.3
± 16
190
490
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Parameter
RθJC
Junction-to-Case
iRθCS
Case-to-Sink, Flat, Greased Surface
iRθJA Junction-to-Ambient
jÃRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
–––
Max.
k0.75
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/26/10
1 page  
AUIRL1404Z/S/L
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
6.0
ID= 75A
5.0
4.0
VDS= 32V
VDS= 20V
3.0
2.0
1.0
0.0
0
20 40 60
QG Total Gate Charge (nC)
80
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.0
VGS = 0V
0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
5
5 Page 
AUIRL1404Z/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
IR Logo
AUIRL1404ZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet AUIRL1404ZL.PDF ] | |
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